Strain-induced InGaAs/InAlAs superlattices for terahertz radiation
D. S. Ponomarev,
A. E. Yachmenev,
S. S. Pushkarev
et al.
Abstract:We study the influence of residual strain in InGaAs/InAlAs superlattice (SL) on the ultrafast photocarrier dynamics under femtosecond laser excitation. We propose and fabricate a novel-designed strained InGaAs/InAlAs SL which allows us to obtain an ultrashort photocarrier relaxation time of τ ∼ 1.5 ps without Be-doping of the InGaAs photoconductor. We assume two dominant mechanisms to be responsible for a sharp reduction of τ : photocarriers trapping by defect levels in InAlAs barriers and increased photocarri… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.