Epitaxial regrowth in surface micromachining of GaAs

Hjort, Klas; Schweitz, Jan‐Åke; Andersson, Sara; Kordina, Olof; Janzén, Erik

doi:10.1109/memsys.1992.187695

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Sacrificial Etch Systems For Iii-v Heterostructures1

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1992

1996

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Cited by 5 publications

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“…With this technique a GaAs etched free wheel positioned under a hub has also been made [25]. In this work, the AlGaAs layers have been protected by a thin GaAs top layer to make the regrowth process less sensitive to the oxygen in the growth chamber.…”

Section: Sacrificial Etch Systems For Iii-v Heterostructuresmentioning

confidence: 99%

Sacrificial etching of III - V compounds for micromechanical devices

Hjort

1996

J. Micromech. Microeng.

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Sacrificial etching of III - V compounds is reviewed with emphasis on its use in surface micromachining of micromechanical structures. A table is presented with 23 different combinations of stopping layers, sacrificial layers, and etchants for sacrificial etching of GaAs- and InP-based epitaxial heterostructures. Examples of surface micromachined microstructures of III - V compounds are shown, and some possible applications are discussed.

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Section: Sacrificial Etch Systems For Iii-v Heterostructuresmentioning

confidence: 99%