Epitaxial nucleation, growth and characterization of highly oriented, (100)-textured diamond films on silicon

Mosaic growth of diamond: a study of homoepitaxial flame deposition and etching of {001}-oriented diamond layers

“…This explains why the deposition of {001} textured layers on non-diamond substrates has gained more and more interest in the past few years. Although {001} textured diamond films are promising material for a number of applications, at this moment even epitaxially textured films have a relatively large angular spread of the diamond crystal orientations and contain a high density of (low-angle) grain boundaries [6,53]. Therefore, these films are less suited for high quality optical components or as substrates for active electronic devices.…”

Diamond deposition by chemical vapor deposition process: Study of the bias enhanced nucleation step

“…This pretreatment leads to a very important increase in the nucleation density [15][16][17][18][19][20][21] and then, by optimizing the BEN step, to an orientation of diamond crystals in relation to the substrate. As yet, the synthesis of homogeneous and monocrystalline diamond films on large surfaces is limited because the nature and the growth mode of the elaborated material lead to heterogeneities ͑azimuthal disorientation of crystals, 5,[7][8][9][10]22 presence of grain boundaries, 7,13 and twinning [9][10][11] ͒ and the BEN step itself induces a heterogeneous plasma which is spatially limited and whose electrical and chemical characteristics evolve with time and experimental configuration. [23][24][25] In this study we focuse on the heterogeneities due to the BEN step.…”

“…For many years, diamond heteroepitaxy on silicon wafers has been widely developed. [5][6][7][8][9][10][11][12][13][14] This development is mainly due to the perfecting of a cathodic bias step of silicon which replaces the old ex situ pretreatment step by scratching. This procedure called bias enhanced nucleation ͑BEN͒ is carried out before the diamond growth step with similar conditions ͑i.e., under a microwave plasma in a CH 4 /H 2 gas mixture͒.…”

In situ boron doping of chemical-vapor-deposited diamond films

“…[1][2][3] In general the investigations showed that the CVD diamond films can be doped in situ in p-type with boron in a large range of doping levels and that the morphologic characteristics of the doped films can be maintained if the doping level does not exceed a level of 6300 ppm. 4 On the other hand, a recent publication on the basis of homoepitaxial films indicates the importance of the doping quality for the electrical properties. 3 Hall investigations showed much lower hole mobility of the doped films than is desired.…”