Epitaxial lift-off for III-nitride devices

Youtsey, C.; McCarthy, Robert; Fay, Patrick

doi:10.1016/bs.semsem.2019.08.003

III-Nitride Electronic Devices

2019

DOI: 10.1016/bs.semsem.2019.08.003

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Epitaxial lift-off for III-nitride devices

C. Youtsey

Robert McCarthy

Patrick Fay

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2021

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“…The dissolved layers, such as aluminum arsenide (AlAs) or aluminum nitride (AlN), also called sacrifice layer for its high etch selectivity, played key roles in the ELO process. [9][10][11][12] Here, we used AlAs as the sacrifice layer and hydrofluoric (HF) mixture etchant to transfer epilayers to the carrier substrate.…”

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The Separation Improvement in Transferring GaAs Solar Cell on Copper Tungsten

Hou

Hsueh

Chen

2021

ECS J. Solid State Sci. Technol.

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In this study, a fast-epitaxial lift-off (ELO) method was introduced and applied to transfer gallium arsenide (GaAs) single junction (SJ) solar cells to copper tungsten (CuW) substrates. In the ELO process, the time of separating solar cell epitaxial layers (epilayers) from the host substrate would influence the performance of devices. Therefore, external and internal trenches were designed to shorten the separation time. Besides, the usage of a stirrer was also used to accelerate the process. It should be noted that ELO separation time depends on chip size, rather than the size of the substrate. It only cost about 4 h to separate a 4 × 4 mm 2 chip from the host substrate in our ELO etchant. After the ELO process, the efficiency of the ELO solar cell can reach 15.81% better than 15.27% of the Ref-cell grown on GaAs substrate.

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confidence: 99%

The Separation Improvement in Transferring GaAs Solar Cell on Copper Tungsten

Hou

Hsueh

Chen

2021

ECS J. Solid State Sci. Technol.

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Epitaxial lift-off for III-nitride devices

Cited by 1 publication

References 76 publications

The Separation Improvement in Transferring GaAs Solar Cell on Copper Tungsten

The Separation Improvement in Transferring GaAs Solar Cell on Copper Tungsten

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