Epitaxial Lateral Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array

Ku, Hao Ming; Huang, Cheng‐Liang; Liao, Chen Zi; Chao, S.

doi:10.1143/jjap.50.04dg07

Jpn. J. Appl. Phys.

2011

DOI: 10.1143/jjap.50.04dg07

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Epitaxial Lateral Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array

Hao Ming Ku

Cheng‐Liang Huang

Chen Zi Liao

et al.

Abstract: We report here details of the epitaxial lateral overgrowth (ELOG) process for embedding a Ta 2 O 5 /SiO 2 multilayer high reflector micro-mirror array (MMA) in the GaN. The process was aiming for purpose of applying the MMA on the micro-light emitting diode (micro-LED) for light extraction enhancement of the micro-LED. A two-step ELOG process with different temperature and pressure to achieve high lateral growth rate and low vertical growth rate was implemented and the two-step ELOG process was followed by a s… Show more

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Cited by 2 publications

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Recent advances in micro-pixel light emitting diode technology

Park,

Pristovsek,

Amano

et al. 2024

Applied Physics Reviews

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Display technology has developed rapidly in recent years, with III–V system-based micro-light-emitting diodes (μLEDs) attracting attention as a means to overcome the physical limitations of current display systems related to their lifetime, brightness, contrast ratio, response time, and pixel size. However, for μLED displays to be successfully commercialized, their technical shortcomings need to be addressed. This review comprehensively discusses important issues associated with μLEDs, including the use of the ABC model for interpreting their behavior, size-dependent degradation mechanisms, methods for improving their efficiency, novel epitaxial structures, the development of red μLEDs, advanced transfer techniques for production, and the detection and repair of defects. Finally, industrial efforts to commercialize μLED displays are summarized. This review thus provides important insights into the potential realization of next-generation display systems based on μLEDs.

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Recent advances in micro-pixel light emitting diode technology

Park,

Pristovsek,

Amano

et al. 2024

Applied Physics Reviews

View full text Add to dashboard Cite

show abstract

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Huang

Feng

Weng

et al. 2017

Opt. Mater. Express

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We demonstrate a series of InGaN/GaN double quantum well nanostructure elements. We grow a layer of 2 μm undoped GaN template on top of a (0001)-direction sapphire substrate. A 100 nm SiO 2 thin film is deposited on top as a masking pattern layer. This layer is then covered with a 300 nm aluminum layer as the anodic aluminum oxide (AAO) hole pattern layer. After oxalic acid etching, we transfer the hole pattern from the AAO layer to the SiO 2 layer by reactive ion etching. Lastly, we utilize metal-organic chemical vapor deposition to grow GaN nanorods approximately 1.5 μm in size. We then grow two layers of InGaN/GaN double quantum wells on the semi-polar face of the GaN nanorod substrate under different temperatures. We then study the characteristics of the InGaN/GaN quantum wells formed on the semi-polar faces of GaN nanorods. We report the following findings from our study: first, using SiO 2 with repeating hole pattern, we are able to grow high-quality GaN nanorods with diameters of approximately 80-120 nm; second, photoluminescence (PL) measurements enable us to identify Fabry-Perot effect from InGaN/GaN quantum wells on the semi-polar face. We calculate the quantum wells' cavity thickness with obtained PL measurements. Lastly, high resolution TEM images allow us to study the lattice structure characteristics of InGaN/GaN quantum wells on GaN nanorod and identify the existence of threading dislocations in the lattice structure that affects the GaN nanorod's growth mechanism.

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Epitaxial Lateral Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array

Cited by 2 publications

References 9 publications

Recent advances in micro-pixel light emitting diode technology

Recent advances in micro-pixel light emitting diode technology

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

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