Epitaxial lateral overgrowth of Ga&lt;inf&gt;x&lt;/inf&gt;In&lt;inf&gt;1−x&lt;/inf&gt;P towards coherent Ga&lt;inf&gt;x&lt;/inf&gt;In&lt;inf&gt;1−x&lt;/inf&gt;P/Si heterojunction by hydride vapor phase epitaxy

Omanakuttan, Giriprasanth; Stergiakis, Stamoulis; Sahgal, Abhishek; Sychugov, Ilya; Lourdudoss, Sebastian; Sun, Yan-Ting

doi:10.1109/iciprm.2016.7528828

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide &Amp; Related Materials (IPR 2016

DOI: 10.1109/iciprm.2016.7528828

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Epitaxial lateral overgrowth of Ga<inf>x</inf>In<inf>1−x</inf>P towards coherent Ga<inf>x</inf>In<inf>1−x</inf>P/Si heterojunction by hydride vapor phase epitaxy

Giriprasanth Omanakuttan

Stamoulis Stergiakis

Abhishek Sahgal

et al.

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Epitaxial lateral overgrowth of Ga<inf>x</inf>In<inf>1−x</inf>P towards coherent Ga<inf>x</inf>In<inf>1−x</inf>P/Si heterojunction by hydride vapor phase epitaxy

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