Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation

Abstract

Abstract

Integration of MoSe2 Monolayers with Epitaxial High-Κ Gd2O3 Substrate: Implication for High-Quality Emission and Modulation of Excitonic Quasiparticles

“…10 Epitaxial Gd 2 O 3 thin films on Si have been widely investigated for their potential application as high-Κ dielectrics in Si-based complementary metal-oxide-semiconductor (CMOS) transistors. 16,17 Further, Gd 2 O 3 , which has a static dielectric constant of ∼15, has been reported as a promising candidate for high refractive index material in dielectric optical multilayers for its large band gap and high transmittance from the ultraviolet to the infrared regime. 18 On the other hand, MoSe 2 has received considerable research attention in the recent past for its potential application in new-generation optoelectronic devices (such as light-emitting diodes and excitonic circuits), photovoltaics, and photocatalysis.…”

“…Epitaxial Gd 2 O 3 thin films on Si have been widely investigated for their potential application as high-Κ dielectrics in Si-based complementary metal-oxide-semiconductor (CMOS) transistors. , Further, Gd 2 O 3 , which has a static dielectric constant of ∼15, has been reported as a promising candidate for high refractive index material in dielectric optical multilayers for its large band gap and high transmittance from the ultraviolet to the infrared regime . On the other hand, MoSe 2 has received considerable research attention in the recent past for its potential application in new-generation optoelectronic devices (such as light-emitting diodes and excitonic circuits), photovoltaics, and photocatalysis. , Among molybdenum-based TMDCs, MoSe 2 exhibits a smaller band gap, higher electron mobilities, higher internal quantum efficiency, and narrower photoluminescence line width compared to the extensively studied TMDC/MoS 2 . , Further, unlike MoS 2 , MoSe 2 exhibits spectrally well-separated exciton and trion transitions with a large trion binding energy of ∼30 meV, which is stable at higher temperatures, making MoSe 2 a convenient choice for investing fundamental properties of the quasiparticles.…”

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures

“…While the Smart Cut TM technology is costintensive, the two other techniques suffer from high thermal budget and limited lateral extent of GeOI (~ 20 m), respectively [4]. On the other hand, epitaxially-grown, single crystalline, high-dielectric oxides on Si have emerged in the recent past as attractive alternative templates for GeOI fabrication, with significant developments reported for a variety of perovskites [13] and lanthanide oxides (Ln 2 O 3 ) [14]. In particular, epitaxial growth of yttria (Y 2 O 3 ) [15], praseodymia (Pr 2 O 3 ) [16][17][18], scandia (Sc 2 O 3 ) [19], neodymia (Nd 2 O 3 ) [20], and gadolinia (Gd 2 O 3 ) [21][22][23][24][25] on Si(111) and Si(001) substrates have been investigated by different research groups.…”

(In,Er)2O3 Alloys and Photoluminescence of Er3+ at Indirect Excitation via the Crystalline Host

“…The most famous representative of this group is Sn‐doped In 2 O 3 – a semiconducting oxide widely used as a transparent electrode and offering inspiring prospects for the near infrared (IR) plasmonics . In contrast, rare earth (RE) sesquioxides are promising candidates for high permittivity dielectric layers in metal‐oxide‐semiconductor technology . Moreover, the lanthanide oxides are known due to fluorescence and optical amplification based on RE intra‐4 f ‐shell electronic transitions.…”

“…[1][2][3] In contrast, rare earth (RE) sesquioxides are promising candidates for high permittivity dielectric layers in metal-oxide-semiconductor technology. [4][5][6] Moreover, the lanthanide oxides are known due to fluorescence and optical amplification based on RE intra-4f-shell electronic transitions. This combination of somewhat antipodal material properties motivates the fabrication of multilayer structures comprising metallic, dielectric, and light emitting layers based on the constituents of only a single material family.…”