Epitaxial La-doped SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon

Liu, B. T.; Maki, Kazunari; So, Y. W.; Valanoor, Nagarajan; Ramesh, R.; Lettieri, J.; Haeni, J. H.; Schlom, Darrell G.; Tian, Wei; Pan, Xiaoqing; Walker, Frederick J.; McKee, R. A.

doi:10.1063/1.1484552

Cited by 57 publications

(19 citation statements)

References 19 publications

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“…Yang et al fabricated epitaxial PZT thin film capacitors on Si by liquid delivery metal organic chemical vapor deposition and studied their polarizations and piezoelectric coefficients [9]. In general, PZT thin film often shows smaller polarizations and piezoelectric coefficients than PZT bulk material with the same composition due to a variety of reasons including electrode [10], interface [11], and substrate [12]. On the other hand, the lattice constant, low resistivity and crystalline temperature of LaNiO 3 (LNO) make it * Corresponding author.…”

Section: Introductionmentioning

confidence: 98%

Influence of LaNiO3 bottom electrode on the structural and physical properties of ferroelectric capacitors

Liu

Cheng

et al. 2007

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 98%

Influence of LaNiO3 bottom electrode on the structural and physical properties of ferroelectric capacitors

Liu

Cheng

et al. 2007

Journal of Alloys and Compounds

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“…6 Plasma grown nanopowder can be used to modify the structure-property relationships, domain structure, and growth dynamics in the integration of various epitaxial oxide and other films on silicon-based nanostructures. [13][14][15] The powder particles can also affect the nucleation of ultrafine crystallites in amorphous silicon-based films, 16 as well as the thermoelectric and other properties of silicon-based films in silicon on insulator ͑SOI͒ and other microfabrication technologies. 17 In practical applications, it is often necessary to control, or manage, the size, density, electrical charge, and transport characteristics of the powder.…”

Section: -4mentioning

confidence: 99%

Nanopowder management and control of plasma parameters in electronegative SiH4 plasmas

Denysenko

Ostrikov

et al. 2003

Journal of Applied Physics

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Femtosecond laser guiding of a high-voltage discharge and the restoration of dielectric strength in air and nitrogen Phys. Plasmas 19, 123502 (2012) Compact high-speed reciprocating probe system for measurements in a Hall thruster discharge and plume Rev. Sci. Instrum. 83, 123503 (2012) On the streamer propagation in methane plasma discharges J. Appl. Phys. 112, 113301 (2012) One-dimensional hybrid-direct kinetic simulation of the discharge plasma in a Hall thruster Phys. Plasmas 19, 113508 (2012) Consideration of the electron energy distribution function shape in a Ar and N2 global model J. Appl. Phys. 112, 103303 (2012) Additional information on J. Appl. Phys. Management of nanosize powder particles via control of plasma parameters in a low-pressure SiH 4 discharge for silicon microfabrication technologies is considered. The spatial profiles of electron and positive/negative ion number densities, electron temperature, and charge of the fine particles are obtained using a self-consistent fluid model of the electronegative plasmas in the parallel plate reactor geometry. The model accounts for variable powder size and number density, powder-charge distribution, local plasma nonuniformity, as well as UV photodetachment of electrons from the nanoparticles. The relations between the equilibrium discharge state and powder properties and the input power and neutral gas pressure are studied. Methods for controlling the electron temperature and SiH 3 Ϫ anion ͑here assumed to be the powder precursor͒ density, and hence the powder growth process, are proposed. It is shown that by controlling the neutral gas pressure, input power, and powder size and density, plasma density profiles with high levels of uniformity can be achieved. Management of powder charge distribution is also possible through control of the external parameters.

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“…[1][2][3][4][5][6][7][8][9] A highly interesting application for STO involves the formation of a high mobility two-dimensional electron gas (2DEG) at the oxide/oxide interface. Among the mechanisms for 2DEG formation, one approach involves tailoring an interface between STO and oxides with a large negative enthalpy of formation such as aluminumbased oxides.…”

Section: Introductionmentioning

confidence: 99%

Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO3 interface: Control of oxygen vacancies

Kormondy

Posadas

Ngo

et al. 2015

Journal of Applied Physics

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In this paper, we report on the highly conductive layer formed at the crystalline γ-alumina/SrTiO3 interface, which is attributed to oxygen vacancies. We describe the structure of thin γ-alumina layers deposited by molecular beam epitaxy on SrTiO3 (001) at growth temperatures in the range of 400–800 °C, as determined by reflection-high-energy electron diffraction, x-ray diffraction, and high-resolution electron microscopy. In situ x-ray photoelectron spectroscopy was used to confirm the presence of the oxygen-deficient layer. Electrical characterization indicates sheet carrier densities of ∼1013 cm−2 at room temperature for the sample deposited at 700 °C, with a maximum electron Hall mobility of 3100 cm2V−1s−1 at 3.2 K and room temperature mobility of 22 cm2V−1s−1. Annealing in oxygen is found to reduce the carrier density and turn a conductive sample into an insulator.

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Epitaxial La-doped SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon

Cited by 57 publications

References 19 publications

Influence of LaNiO3 bottom electrode on the structural and physical properties of ferroelectric capacitors

Influence of LaNiO3 bottom electrode on the structural and physical properties of ferroelectric capacitors

Nanopowder management and control of plasma parameters in electronegative SiH4 plasmas

Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO3 interface: Control of oxygen vacancies

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