Epitaxial Growth Rate of GaAs : Chloride Transport Process

Abstract

A rate expression is developed for the growth rate of gallium arsenide based on a postulated mechanism of the growth kinetics. This rate expression, when applied to the experimental data reported by Shaw (4), describes the growth rate quite accurately over wide ranges of temperature and concentrations. In particular, it describes in a quantitative manner the temperature and normalGaCl concentration dependence of the growth rate, which goes through a maximum with the temperature and the concentration. The growth rate as affected by diffusion is given in terms of concentration boundary layer and the intrinsic growth rate obtained. A criterion of negligible diffusional effect is developed. The effect of physical orientation of substrate surface on the growth rate is also presented. These results allow one to determine rather completely the growth rate as affected by temperature, vapor‐phase composition, fluid velocity, and the substrate orientation.

Compositional aspects of the vapour-phase epitaxial growth of GaInAs layers from Ga-In-As-H-Cl system

“…where a is the activity and the Ps are the partial pressures. The separate kinetic steps involved in the growth processes of GalnAs will be considered as adsorption processes based on models (Cadoret and Cadoret 1975;Chernov and Rusaikin 1978;Korec and Heyen 1982;Hong and Lee 1985;Nshizawa et al 1986;Mani et al 1987Mani et al , 1988Mani et al , 1990Mani et al , 1991. Thermodynamics does not provide a complete description of a growing system.…”

More precise uniform estimates of oscillatory integrals and areas

“…The value of K3 is (Hong and Lee 1985) K3 (14) 81 900 lnK3=-70.5312+-T * (iv) The surface reaction of As* and GaCl* for the formation of a complex molecule AsGaCl*:…”

“…Figure 3 shows the numerical values of the rate and equilibrium constants as functions of temperature using equations (9), (1 l), (1 3), (1 5), (1 9) and (28). We have used the values of the rate constants K , K , , K Z and K 3 available in the literature (Korec andHeyen 1982, Hong andLee 1985). The value of In K , has been estimated using equation (28) for the experimental data of Shaw (1975).…”

Spatial Variations in the Epitaxial Growth of InP and InGaAs by Trichloride VPE and Their Physical and Chemical Origins

“…The growth of indium phosphide, indium gallium arsenide, and indium gallium arsenide phosphide is feasible in this technology (6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16) and multilayer device structures, lattice matched to indium phosphide substrates, can be routinely grown (17)(18)(19)(20)(21)(22)(23). The processes involved in the growth of III-V alloys by VPE have been rather extensively studied, both experimentally and theoretically (2,7,(24)(25)(26)(27)(28)(29)(30)(31)(32)(33)(34)(35)(36)(37)(38)(39)(40)(41). However, the more detailed studies have generally involved gallium arsenide growth (24)(25)(26)(27)(28)(29).…”

“…The processes involved in the growth of III-V alloys by VPE have been rather extensively studied, both experimentally and theoretically (2,7,(24)(25)(26)(27)(28)(29)(30)(31)(32)(33)(34)(35)(36)(37)(38)(39)(40)(41). However, the more detailed studies have generally involved gallium arsenide growth (24)(25)(26)(27)(28)(29). Also, although the general trends are fairly well understood, most quantitative models are not very successful in predicting experimental growth rates and especially variations across the wafer.…”