More precise uniform estimates of oscillatory integrals and areas

Abstract

Features of the initial stages of GaAs epitaxy, such as formation of nucleus centres on the surface of crystalline substrates, have been analysed using the classical theory of heterogeneous nucleation. The effect of the orientation of the substrate surface has been taken into consideration and a numerical analysis has been made in an effort t o understand nucleation behaviour in GaAs. A scheme of reactions involving the reaction constants has been presented for the formation of GaAs, and the expression for the growth rate of epitaxial GaAs has been developed. The numerical calculations based on our theoretical results have been made and these are compared with experimental results.