Epitaxial growth of ZnO films on Si(111)

Tiwari, Ashutosh; Park, M.; Jin, Chunming; Wang, H.; Kumar, Deepak; Narayan, J.

doi:10.1557/jmr.2002.0361

Cited by 50 publications

(32 citation statements)

References 11 publications

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“…In perspective, tiny and flexible modules based on oxide thin films may be used to convert in energy the waste heat generated by car engines, power plants, steel furnace (temperatures 1000 K or more) [8]. That is why in recent years, many research groups have intensively investigated on the growth of high quality ZnO thin films for various applications [9][10][11][12]. Thermoelectric ZnO thin films are not enough explored, even if they are relatively easy to prepare [13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Effect of self-grown seed layer on thermoelectric properties of ZnO thin films

et al. 2016

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Effect of self-grown seed layer on thermoelectric properties of ZnO thin films, Thin Solid Films (2015), Abstract:The influence of self-grown seed has been studied on thermoelectric performance of 2% Aldoped ZnO (AZO) thin films. The thickness and orientation of c-axis domains in seed layer change on different substrates while other deposition conditions were kept unchanged for a comparable study. The changes occur because of different nucleation process of thin film growth on substrate interface and the different lattice mismatch between AZO and substrate. Thin films are grown by pulsed laser deposition on single crystals (SrTiO 3 (STO) and Al 2 O 3 ) and cheap amorphous fused silica (FS) substrates at 400⁰C. All thin films are c-axis oriented. The grains are highly connected and elongated in shape which leads to high thermoelectric properties. The thicker self-grown seed layer is found in thin film deposited on FS substrates which shows best performance: electrical conductivity σ = 93 S/cm and Seebeck coefficient S = -203 µV/K, which estimate power factor (S 2 .σ) about 0.37×10 -3 Wm -1 K -2 at 600 K. The value of thermal conductivity (κ) was found lowest (4.89 Wm -1 K -1 ) for thin film deposited on FS than the other thin films (6.9 Wm -1 K -1 on Al 2 O 3 and 6.55 Wm -1 K -1 on STO) at 300 K. The figure of merit, ZT = S 2 .σ.T/ κ, is calculated 0.046 at 600K, 5 times larger than the ZT of our previous reported bulk AZO, which is promising for practical applications of thermoelectric oxide thin films.

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Section: Introductionmentioning

confidence: 99%

Effect of self-grown seed layer on thermoelectric properties of ZnO thin films

et al. 2016

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“…Different substrates are used e.g. Si(111) [15,16], Si(100) [15,17], InP(100) [18], and Al 2 O 3 , of which the latter one provides the best template for ZnO growth leading to the highest structural quality [14]. It is well-known that the film crystallinity and epitaxial relationship with respect to the substrate depend on the substrate orientation and temperature, on the film growth rate and other conditions.…”

Section: Introductionmentioning

confidence: 99%

Structure and surface termination of ZnO films grown on (0001)- and (112¯0)-oriented Al2O3

Nefedov

Girol

et al. 2006

Thin Solid Films

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“…However, heteroepitaxial growth of ZnO on Si(0 0 1) can lead to integration of functionalities with improved and novel smart device structures. A direct growth of ZnO on Si(0 0 1) is still a technological challenge because of the formation of a native amorphous SiO 2 layer, which can lead to growth of polycrystalline or textured ZnO thin films.To overcome this complication, different buffer layers, such as gallium nitride [7], titanium nitride [8] and yttria-stabilized zirconia (YSZ) [9] have been used to grow epitaxial ZnO on Si(1 1 1) substrates. In addition, tetragonal YSZ [10] and STO/TiN [11] have been used to integrate ZnO with Si(0 0 1).…”

Section: Introductionmentioning

confidence: 99%