We have made a comparative study of epitaxial growth of VO2 thin films on c-cut (0001) and r-cut (11¯02) sapphire substrates, and the semiconductor to metal transition (SMT) characteristics of these films have been correlated with their structural details. On c-sapphire, VO2 grows epitaxially in (002) orientation. These (002) oriented VO2 films have 60° twin boundaries due to three equivalent in-plane orientations. The epitaxial VO2 films on r-sapphire consisted of two orientations, namely (200) and (2¯11). The coexistence of these two orientations of VO2 has been explained on the basis of similarity of atomic arrangements in (200) and (2¯11) planes. The thermal hysteresis (ΔH), sharpness of the transition (ΔT), and the transition temperature for VO2 films on c-sapphire were found to be 4.8, 8.5, and 72.6 °C, respectively, which were higher than the corresponding values of 3.3, 5.4, and 60.3 °C for films on r-sapphire. The SMT temperature for VO2 films on c-sapphire was close to the bulk value of 68.0 °C. The significant decrease in transition temperature to 60.3 °C for VO2 films on r-sapphire has been attributed to the compressive strain along [002] direction of VO2.

A stable and repeatable abnormal bipolar resistive switching behavior was observed in a Pt/GaO1.3/Pt sandwich structure without an electroforming process. The low resistance state (LRS) and the high resistance state (HRS) of the device can be distinguished clearly and be switched reversibly under a train of the voltage pulses. The LRS exhibits a conduction of electron tunneling, while the HRS shows a conduction of Schottky-type. The observed phenomena are considered to be related to the migration of oxygen vacancies which changes the space charge region width of the metal/semiconductor interface and results in a different electron transport mechanism.

Epitaxial VO2 films grown by pulsed laser deposition (PLD) on c-cut sapphire substrates ((0001) Al2O3) were studied by aberration-corrected scanning transmission electron microscopy (STEM). A number of film/substrate orientation relationships were found and are discussed in the context of the semiconductor-metal transition (SMT) characteristics. A structurally and electronically modified buffer layer was revealed on the interface and was attributed to the interface free-energy minimization process of accommodating the symmetry mismatch between the substrate and the film. This interfacial transition layer is expected to affect the SMT behavior when the interfacial region is a significant fraction of the VO2 film thickness.

Dengue viruses are mosquito-borne flaviviruses and may cause the life-threatening dengue hemorrhagic fever and dengue shock syndrome. Its envelope protein is responsible mainly for the virus attachment and entry to host cells. To identify the human cellular proteins interacting with the envelope protein of dengue virus serotype 2 inside host cells, we have performed a screening with the yeast-two-hybrid-based "Functional Yeast Array". Interestingly, the small ubiquitin-like modifier-1 conjugating enzyme 9 protein, modulating cellular processes such as those regulating signal transduction and cell growth, was one of the candidates interacting with the dengue virus envelope protein. With co-precipitation assay, we have demonstrated that it indeed could interact directly with the Ubc9 protein. Site-directed mutagenesis has demonstrated that Ubc9 might interact with the E protein via amino acid residues K51 and K241. Furthermore, immunofluorescence microscopy has shown that the DV2E-EGFP proteins tended to progress toward the nuclear membrane and co-localized with Flag-Ubc9 proteins around the nuclear membrane in the cytoplasmic side, and DV2E-EGFP also shifted the distribution of Flag-Ubc9 from evenly in the nucleus toward concentrating around the nuclear membrane in the nucleic side. In addition, over-expression of Ubc9 could reduce the plaque formation of the dengue virus in mammalian cells. This is the first report that DV envelope proteins can interact with the protein of sumoylation system and Ubc9 may involve in the host defense system to prevent virus propagation.

Well-ordered metal-organic nanostructures of Fe-PTCDA (perylene-3,4,9,10-tetracarboxylic-3,4,9,10-dianhydride) chains and networks are grown on a Au(111) surface. These structures are investigated by high-resolution scanning tunneling microscopy. Digitized frontier orbital shifts are followed in scanning tunneling spectroscopy. By comparing the frontier energies with the molecular coordination environments, we conclude that the specific coordination affects the magnitude of charge transfer onto each PTCDA in the Fe-PTCDA hybridization system. A basic model is derived, which captures the essential underlying physics and correlates the observed energetic shift of the frontier orbital with the charge transfer.

Increasing evidence has pointed to an important role of SUMOylation in cell cycle regulation, especially for M phase. In the current studies, we have obtained evidence through in vitro studies that the master M phase regulator CDK1/cyclin B kinase phosphorylates the SUMOylation machinery component Ubc9, leading to its enhanced SUMOylation activity. First, we show that CDK1/cyclin B, but not many other cell cycle kinases such as CDK2/cyclin E, ERK1, ERK2, PKA and JNK2/SAPK1, specifically enhances SUMOylation activity. Second, CDK1/cyclin B phosphorylates the SUMOylation machinery component Ubc9, but not SAE1/SAE2 or SUMO1. Third, CDK1/cyclin B-phosphorylated Ubc9 exhibits increased SUMOylation activity and elevated accumulation of the Ubc9-SUMO1 thioester conjugate. Fourth, CDK1/cyclin B enhances SUMOylation activity through phosphorylation of Ubc9 at serine 71. These studies demonstrate for the first time that the cell cycle-specific kinase CDK1/cyclin B phosphorylates a SUMOylation machinery component to increase its overall SUMOylation activity, suggesting that SUMOylation is part of the cell cycle program orchestrated by CDK1 through Ubc9.

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Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on device performance. The surface roughness increased slightly after dry etching and decreased after regrowth. According to X-ray diffraction results, the etch-then-regrow process caused a slight increase of defect density due to increased edge dislocations. Schottky parameters extracted from forward current-voltage curves, such as turn-on voltages of 0.74 V and 0.72 V, ideality factors of 1.07 and 1.10, and barrier heights of 1.07 eV and 1.05 eV, were obtained for diodes based on the regrown and as-grown samples, respectively. The breakdown voltage of the regrown sample was much lower than the as-grown sample. The regrowth interface can be regarded as a n-doping GaN layer due to the high interface charge density after the etch-then-regrown process. This equivalent n-doping GaN layer reduced the effective thickness of the UID-GaN under the Schottky contact thus causing lower breakdown voltage for the regrown sample. Poole-Frenkel emission and trap-assisted tunneling processes were responsible for the leakage of both as-grown and regrown samples according to the temperature dependence of the reverse currents.INDEX TERMS Schottky barrier diodes, GaN-on-GaN, regrow, leakage, interface.