Epitaxial Growth of Thin Films

Rasic, Daniel; Narayan, J.

doi:10.5772/intechopen.82745

Cited by 10 publications

(7 citation statements)

References 46 publications

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“…Contrary to h-LuFeO 3 (001)//YSZ(100)), one variant of h-LuFeO 3 on YSZ(111) has the larger modulus of lattice mismatch (∼13%) than the other one (∼7%) (Figure 6b). The practice of epitaxial film growth shows that 13% is an extremely large lattice mismatch, 37 which would lead to anomalously high strain in films, and thus such variant should not form at all. Our calculations that are discussed below also indicate that only one variant of h-LuFeO 3 is possible on the YSZ(111) surface.…”

Section: Methodsmentioning

confidence: 99%

Multiferroic h-LuFeO₃ Thin Films on (111) and (100) Surfaces of YSZ Substrates: An Experimental and Theoretical Study

Markelova

Nygaard

Tsymbarenko

et al. 2021

ACS Appl. Electron. Mater.

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Thin films of in-bulk unstable multiferroic hexagonal LuFeO 3 were synthesized on coherent (111) and for the first time on incoherent (100) YSZ and Pt/ YSZ surfaces by the metal−organic chemical vapor deposition (MOCVD) technique. The obtained films were thoroughly studied by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), electron backscatter diffraction (EBSD), atomic force microscopy (AFM), piezoresponse force microscopy (PFM), and theoretical simulations. The substrate surface symmetry has a crucial role in the formation of the epitaxial film's structure. Also, the molecular mechanics calculations were adapted for film/substrate interface simulation and, for the first time, the number of variants was predicted by the number of minima on the energy profile as well as it was proved that that the formation of h-LuFeO 3 is more energetically preferable than o-LuFeO 3 , even on the incoherent surface. It was shown that h-LuFeO 3 films deposited on the YSZ(111) surface have formed a single in-plane rotational variant structure, while those deposited on the YSZ(100) surface have formed a bivariant structure. PFM results of bivariant h-LuFeO 3 (001)//Pt(111)//YSZ(100) show half the size of ferroelectric domains (∼100 nm) and twice as large the values of piezoelectric response compared to h-LuFeO 3 (001)//Pt(111)//YSZ(111).

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Section: Methodsmentioning

confidence: 99%

Multiferroic h-LuFeO₃ Thin Films on (111) and (100) Surfaces of YSZ Substrates: An Experimental and Theoretical Study

Markelova

Nygaard

Tsymbarenko

et al. 2021

ACS Appl. Electron. Mater.

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“…The mixed zone (Figure 2d) is substantially flat and homogeneous, with some micrometer-sized defects. The overall impression is that the cracks observed on the surface in the hazy zone are due to some delamination, possibly driven also by the higher film thickness in this zone, as reported for other heterostructures [26,27]. Specifically, in the case of strongly bonded oxides [27], where dislocation formation and propagation steps are difficult, the thermal misfit stress gets more prominent.…”

Section: Optical Microscopymentioning

confidence: 71%

Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates

Girolami,

Bosi,

Pettinato

et al. 2024

Materials

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Orthorhombic κ-Ga2O3 thin films were grown for the first time on polycrystalline diamond free-standing substrates by metal-organic vapor phase epitaxy at a temperature of 650 °C. Structural, morphological, electrical, and photoelectronic properties of the obtained heterostructures were evaluated by optical microscopy, X-ray diffraction, current-voltage measurements, and spectral photoconductivity, respectively. Results show that a very slow cooling, performed at low pressure (100 mbar) under a controlled He flow soon after the growth process, is mandatory to improve the quality of the κ-Ga2O3 epitaxial thin film, ensuring a good adhesion to the diamond substrate, an optimal morphology, and a lower density of electrically active defects. This paves the way for the future development of novel hybrid architectures for UV and ionizing radiation detection, exploiting the unique features of gallium oxide and diamond as wide-bandgap semiconductors.

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“…is somewhat high, yet permissible for the epitaxial growth [31]. It occurs that in the case of the synthesized nanoparticles Fe3O4 is being strongly compressed in the interface plane.…”

Section: Resultsmentioning

confidence: 98%

Synthesis of Sandwiched Composite Nanomagnets by Epitaxial Growth of Fe3O4 Layers on Srfe12o19 Nanoplates in High-Boiling Organic Solvent

Anokhin¹,

Deyankov²,

Xia³

et al. 2022

Preprint

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Herein, we demonstrate the synthesis of sandwiched composite nanomagnets, which consist of hard magnetic hexaferrite cores and magnetite outer layers. The hexaferrite plate-like nanoparticles with average dimensions of 16.0 nm × 4.9 nm were prepared by glass crystallization method and were covered by spinel-type iron oxide via thermal decomposition of iron acetylacetonate in hexadecane solution. The hexaferrite nanoplates act as seeds for the epitaxial growth of the magnetite, which results in uniform continuous outer layers on both sides. The thickness of the layers can be adjusted by controlling the concentration of metal ions. In this way, layers with average thickness of 3.9 and 5.0 nm were obtained. Due to an atomically smooth interface the magnetic composites demonstrate the exchange coupling effect acting as single phases during remagnetization. The developed approach can be applied to any spinel-type material with matching lattice parameters and opens the way to expanding the performance of hexaferrite nanomagnets due to a combination of various functional properties.

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Epitaxial Growth of Thin Films

Cited by 10 publications

References 46 publications

Multiferroic h-LuFeO₃ Thin Films on (111) and (100) Surfaces of YSZ Substrates: An Experimental and Theoretical Study

Multiferroic h-LuFeO₃ Thin Films on (111) and (100) Surfaces of YSZ Substrates: An Experimental and Theoretical Study

Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates

Synthesis of Sandwiched Composite Nanomagnets by Epitaxial Growth of Fe<sub>3</sub>O<sub>4 </sub>Layers on Srfe<sub>12</sub>o<sub>19</sub> Nanoplates in High-Boiling Organic Solvent

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Epitaxial Growth of Thin Films

Cited by 10 publications

References 46 publications

Multiferroic h-LuFeO3 Thin Films on (111) and (100) Surfaces of YSZ Substrates: An Experimental and Theoretical Study

Multiferroic h-LuFeO3 Thin Films on (111) and (100) Surfaces of YSZ Substrates: An Experimental and Theoretical Study

Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates

Synthesis of Sandwiched Composite Nanomagnets by Epitaxial Growth of Fe<sub>3</sub>O<sub>4 </sub>Layers on Srfe<sub>12</sub>o<sub>19</sub> Nanoplates in High-Boiling Organic Solvent

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Multiferroic h-LuFeO₃ Thin Films on (111) and (100) Surfaces of YSZ Substrates: An Experimental and Theoretical Study

Multiferroic h-LuFeO₃ Thin Films on (111) and (100) Surfaces of YSZ Substrates: An Experimental and Theoretical Study