Epitaxial growth of Ni on MgO(002)1×1: surface interaction vs. multidomain strain relief

Svedberg, Erik B.; Sandström, Per-Erik; Sundgren, J.‐E.; Greene, J. E.; Madsen, Lynnette D.

doi:10.1016/s0039-6028(99)00379-9

Cited by 38 publications

(25 citation statements)

References 18 publications

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“…For instance, Raatz and Woltersdorf 50 reported the effect of Ni film thickness on film orientation. McCaffrey et al, 51 Svedberg et al, 52 Reniers et al 53 and Qiu et al 54 studied the effect of growth temperature on the orientation of epitaxial Ni films on MgO(001). Lukaszew et al 55 studied the magneto-optic Kerr effect (the magnetization-induced change in polarization state and/or intensity of the light reflected from the surface of a magnetized medium) of Ni thin films deposited on MgO singlecrystal substrates.…”

Section: Ni On Si (100)mentioning

confidence: 99%

Multifunctional heterostructures integrated on Si (100)

Singamaneni

Prater

Narayan

2015

Emerging Materials Research

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This paper focuses on the growth of several important oxide systems, including BiFeO 3 (BFO), La 0·7 Sr 0·3 MnO 3 (LSMO), BaTiO 3 (BTO), and non-oxide films including permalloy/MgO and Ni/MgO. It is shown that one can achieve thin-film epitaxy over an extended misfit scale by using the paradigm of DME. This will be critical for the future integration of multifunctional heterostructures onto CMOS-based chips in order to create smart structures for the next-generation solid-state devices. In addition, this paper explores the utility of using laser processing to introduce defect populations that induce magnetism in non-magnetic oxides such as STO and BTO as an alternative to incorporating more traditional magnetic layers into the structure. IntroductionThe integration of complex oxide films and heterostructures within existing electronics can significantly expand the range of functional properties available for device exploitation, including colossal magneto-resistance, magnetocaloric effects, coupled magnetic and polarisation (multiferroic) behaviour, and some interesting physical phenomena including spin, charge and orbital ordering. As a result, there has been a tremendous increase in research related to the deposition of multifunctional thin-film heterostructures for solid-state device technology.1-3 The realization of these expected capabilities requires the integration of various multifunctional materials on substrates of industrial interest, particularly integration with existing silicon (Si)-integrated circuits where total misfit strain can range from 1% up to as much as 25%.4,5 Thus, strain and defect control in these films are essential. The total strain that develops in multilayer thin-film heterostructures has three primary components: (a) lattice misfit arising from the differences in lattice constants between the film and the substrate, (b) thermal misfit arising from differences in coefficients of thermal expansion and (c) microstructural strains arising from defects and alloying elements (dopants). By far the largest of these components is the misfit strain. This paper primarily addresses minimization of the lattice misfit component of the strain.According to conventional wisdom, as outlined under the latticematching epitaxy (LME) paradigm, thin films grow as epitaxial Multifunctional heterostructures integrated on Si (100) Singamaneni, Prater and Narayan ICE Publishing: All rights reserved

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Section: Ni On Si (100)mentioning

confidence: 99%

Multifunctional heterostructures integrated on Si (100)

Singamaneni

Prater

Narayan

2015

Emerging Materials Research

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“…The lattice misfit between MgO and Ni is 16%. However, it has been postulated [6] that an in-plane super-cell matching (commensuration) between the film and substrate with a o (Ni) x 6 = 2.0446nm and a o (MgO) x 5 = 2.1066 nm will reduce the misfit to ~0.8%. The critical thickness needed to relieve such a small strain may be quite large.…”

Section: Discussion (001) Oriented Ni Filmsmentioning

confidence: 99%

“…The substrates used in the experiment were 0.5 mm thick, 1 x 1 cm 2 pre-polished MgO (001) and (111) oriented single crystals, which were heat-treated in UHV at 800 o C for 1 hr. The combination of flat polished substrates and the UHV heating cycle to allow the surface layers to regain crystalline order has been proven to permit growth of single crystal metal films [6] as well as exhibiting sharp reflection high-energy electron diffraction (RHEED) from the MgO surface.…”

Section: Methodsmentioning

confidence: 99%

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Epitaxial growth of (001) and (111) Ni films on MgO substrates

et al. 2000

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Metal-ceramic interfaces are important in applications as diverse as magnetic storage media and supported catalysts. It is very important to understand how the crystallography and microstructure of metallic films deposited onto ceramic substrates depend on growth and/or annealing conditions so that their physical properties (e.g. magnetic, electronic, etc.) can be tailored for specific applications. To this end, we have studied the epitaxial growth and annealing of (001) and (111) Ni films MBE grown on MgO substrates, where we have observed the evolution of the surface using correlated insitu RHEED (reflection high-energy-electron diffraction) and STM (scanning tunneling microscopy) measurements.

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“…Before growth, the substrates were UHV annealed at 700 °C for 30 minutes to degas and re-crystallize the surface layers of the substrate, thus improving the epitaxial growth of FePd on MgO(001). 11 The FePd films were capped with a 5 nm Au layer deposited at RT and at an Ar pressure of 5 mTorr with a deposition rate of 0.28 Å/s. This Au capping layer prevents oxidation of the FePd and allows a simpler analysis of the magnetic properties of the system by avoiding substantial effects created by using magnetically polarizable capping materials such as Pd.…”

Section: Experimental Conditionsmentioning

confidence: 99%

Microstructural, Magnetic Anisotropy, and Magnetic Domain Structure Correlations in Epitaxial FePd Thin Films With Perpendicular Magnetic Anisotropy

et al. 2010

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Index Terms-Magnetic domains, perpendicular magnetic anisotropy, perpendicular magnetic recording, thin films L1 0 -ordered FePd epitaxial thin films were prepared using dc magnetron sputter deposition on MgO (001) substrates. The films were grown with varying thickness and degree of chemical order to investigate the interplay between the microstructure, magnetic anisotropy, and magnetic domain structure. The experimentally measured domain size/period and magnetic anisotropy in this high perpendicular anisotropy system were found to be correlated following the analytical energy model proposed by Kooy and Enz that considers a delicate balance between the domain wall energy and the demagnetizing stray field energy.

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Epitaxial growth of Ni on MgO(002)1×1: surface interaction vs. multidomain strain relief

Cited by 38 publications

References 18 publications

Multifunctional heterostructures integrated on Si (100)

Multifunctional heterostructures integrated on Si (100)

Epitaxial growth of (001) and (111) Ni films on MgO substrates

Microstructural, Magnetic Anisotropy, and Magnetic Domain Structure Correlations in Epitaxial FePd Thin Films With Perpendicular Magnetic Anisotropy

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