Epitaxial growth of n-type β-FeSi2thin films on p-type Si(111) substrates by radio-frequency magnetron sputtering and rectifying action of heterojunctions
Abstract:n-Type β-FeSi2 thin films were deposited on p-type Si(111) substrates by conventional radio frequency magnetron sputtering at substrate temperatures of 500 -600 ºC without post-annealing. The epitaxial growth of β-FeSi2 on Si(111) initiates at substrate temperatures of higher than 560 ºC, and it was found that the epitaxial growth is indispensable for the n-type β-FeSi2/p-type Si heterojunctions having rectifying action.
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