β-FeSi2 thin films were epitaxially grown on p-type Si(111) substrates at a substrate temperature of 560 °C and Ar pressure of 2.66 × 10−1 Pa by radio-frequency magnetron sputtering (RFMS) using a sintered FeSi2 target, without postannealing. The resultant n-type β-FeSi2/p-type Si heterojunctions were evaluated as near-infrared photodiodes. Three epitaxial variants of β-FeSi2 were confirmed by X-ray diffraction analysis. The heterojunctions exhibited typical rectifying action at room temperature. At 300 K, the heterojunctions showed a substantial leakage current and minimal response for irradiation of near-infrared light. At 50 K, the leakage current was markedly reduced and the ratio of the photocurrent to dark current was considerably enhanced. The detectivity at 50 K was estimated to be 3.0 × 1011 cm Hz1/2/W at a zero bias voltage. Their photodetection was inferior to those of similar heterojunctions prepared using facing-target direct-current sputtering (FTDCS) in our previous study. This inferiority is likely because β-FeSi2 films prepared using RFMS are located in plasma and are damaged by it.
Effect of sulfurization conditions and post-deposition annealing treatment on structural and electrical properties of silver sulfide films Influence of postdeposition annealing on the structural and optical properties of sputtered zinc oxide film Abstract. Gallium oxide (Ga 2 O 3 ) films are prepared by RF magnetron sputtering at room temperature. Structural and optical properties of the films with different thickness are studied before and after annealing. An increase in surface roughness due to grain size growing is observed on annealed films. However, optical transmittance in infrared to ultra violet region was kept at above 80% regardless of the rough surface morphology.
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