Epitaxial growth of LiNbO3 thin films in a microwave oven

Vasconcelos, N. S. L. S.; Vasconcelos, J. S.; Bouquet, Valérie; Zanetti, S. M.; Leite, E. R.; Longo, Elson; Soledade, L. E. B.; Pontes, F. M.; Guilloux-Viry, M.; Перрин, А.; Bernardi, Maria Inês Basso; Varela, José Arana

doi:10.1016/s0040-6090(03)00587-x

Cited by 61 publications

(38 citation statements)

References 34 publications

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“…The microwave oven used was a simple domestic model similar to that described in the literature. 7 The crystallization was performed placing the SiC susceptor below the substrate. After crystallization, the films were characterized by x-ray diffraction ͑Rigaku, 20-2000͒, 40 kV and 150 mA from 2 ͑10°-50°͒ following the phase evolution.…”

Section: Methodsmentioning

confidence: 99%

“…With proper understanding and control, many technically important materials can be heated rapidly, uniformly, selectively, less expansively, and with greater control than is possible with conventional methods. 7 In this work, microwave energy to promote a rapid thermal way for the crystallization of the film was investigated with the advantage of reducing the time and, in some cases, the temperature of the thermal treatment. The purpose of this study is to use LSCO as the oxide bottom electrode, and at the same time to provide a template to grow better quality BLT films with preferred orientation.…”

Section: Introductionmentioning

confidence: 99%

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Ferroelectric properties and leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

Simões

Ramírez

Riccardi

et al. 2005

Journal of Applied Physics

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The ferroelectric properties and leakage current mechanisms of preferred oriented Bi 3.25 La 0.75 Ti 3 O 12 ͑BLT͒ thin films deposited on La 0.5 Sr 0.5 CoO 3 by the polymeric precursor method were investigated. These films showed excellent ferroelectric properties in terms of large remnant polarization ͑2P r ͒ of 47.6 C/cm 2 and ͑2E c ͒ of 55 kV/ cm, fatigue-free characteristics up to 10 10 switching cycles, and a current density of 0.7 A/cm 2 at 10 kV/ cm. X-ray diffraction and scanning electron microscope investigations indicate that the deposited films exhibit a dense, well-crystallized microstructure having random orientations and with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the platelike grains of the BLT films, which make the domain walls easier to be switched under external field.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ferroelectric properties and leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

Simões

Ramírez

Riccardi

et al. 2005

Journal of Applied Physics

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“…It is important to emphasize that relaxation phenomena underlie many electrical properties of the ferroelectric film and can even block switching process, which is the stumbling block of the contemporary electronics. From this point of view, various approaches, such as optimization of the sputtering parameters [12] , doping [13] and annealing [14] have been applied to obtain the desired result in switching of the ferroelectric devices. Consequently, there is no doubt that investigation of the relation between the structure of the grown films and their relaxation properties is urgent.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties and local domain structure of LiNbO3 thin film grown by ion beam sputtering method

Иевлев

Shur²,

Sumets

et al. 2013

ACTA METALL SIN

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The nanocrystalline ferroelectric LiNbO 3 films on (001) Si substrates with the random orientation of polycrystalline grains and the predominance of the grains with lateral orientation of the polar axis were grown using the ion beam sputtering method. The remanent polarization and the coercive field are 12 μC/cm 2 and 29 kV/cm, respectively. The thermal annealing leads to the coarsening of the grains. The appearance of the "local texture," which gives rise to the unipolarity of the heterostructures caused by the predominance of the one direction in the vertical component of the spontaneous polarization, is investigated.

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“…Another approach utilizes the microwave frequency source of energy that is being developed as a way to process materials and has opened an opportunity to enhance crystallization with a lower annealing processing time, since it decreases the interfacial reactions between ferroelectric thin films and electrodes and also improves the control over the crystallographic orientation of the thin films. [9][10][11] Several synthesizing methods are available for the growth of ferroelectric thin films and metallic oxide electrodes, such as metalorganic chemical vapor deposition, 12 pulse laser deposition, 13 magnetron sputtering, 14 In the present work, we report on the preparation of highly ͑100͒ oriented Pb 0.8 Ba 0.2 TiO 3 and metallic oxide LaNiO 3 thin films with excellent structural, microstructural, dielectric, and ferroelectric properties on LaAlO 3 substrates by the soft chemical method, and a domestic microwave oven was used to crystallize these thin films.…”

mentioning

confidence: 99%

Very large dielectric constant of highly oriented Pb1−xBaxTiO3 thin films prepared by chemical deposition

Leite

Mambrini

Escote

et al. 2004

Applied Physics Letters

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Highly (100) oriented Pb0.8Ba0.2TiO3/LaNiO3 structures were grown on LaAlO3(100) substrates by using a wet, soft chemical method and crystallized by the microwave oven technique. The Au/PBT/LaNiO3/LaAlO3 capacitor shows a hysteresis loop with remnant polarization, Pr, of 15 μC/cm2, and coercive field, Ec, of 47 kV/cm at an applied voltage of 3 V, along with a dielectric constant over 1800. Atomic force microscopy showed that Pb0.8Ba0.2TiO3 is composed of large grains about 300 nm. The experimental results demonstrated that the microwave preparation is rapid, clean, and energy efficient. Therefore, we demonstrated that the combination of the soft chemical method with the microwave process is a promising technique to grow highly oriented thin films with excellent dielectric and ferroelectric properties, which can be used in various integrated device applications.

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Epitaxial growth of LiNbO3 thin films in a microwave oven

Cited by 61 publications

References 34 publications

Ferroelectric properties and leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

Ferroelectric properties and leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

Electrical properties and local domain structure of LiNbO3 thin film grown by ion beam sputtering method

Very large dielectric constant of highly oriented Pb1−xBaxTiO3 thin films prepared by chemical deposition

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