Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4

Ohta, Jitsuo; Mitamura, K.; Kobayashi, Atsushi; Honke, T.; Fujioka, Hiroshi; Oshima, Masaharu

doi:10.1016/j.ssc.2005.11.015

Cited by 12 publications

(9 citation statements)

References 19 publications

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“…12 In addition, non-GaN substrates with lattice structures and sizes that more closely match those of GaN than sapphire or SiC are being explored. For example, LiGaO 2 [54], ZrB 2 [35], ZnO [43], and (Mn,Zn)Fe 2 O 4 (111) [71] have lattice constants that span a wide range of InGaN alloy compositions, though epitaxial growth of InGaN on many of these substrates has proven challenging [71].…”

Section: Extended Defectsmentioning

confidence: 99%

Research challenges to ultra‐efficient inorganic solid‐state lighting

Phillips¹,

Coltrin

Crawford

et al. 2007

Laser & Photonics Reviews

375

268

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Solid-state lighting is a rapidly evolving, emerging technology whose efficiency of conversion of electricity to visible white light is likely to approach 50% within the next several years. This efficiency is significantly higher than that of traditional lighting technologies, giving solid-state lighting the potential to enable significant reduction in the rate of world energy consumption. Further, there is no fundamental physical reason why efficiencies well beyond 50% could not be achieved, which could enable even more significant reduction in world energy usage. In this article, we discuss in some detail: (a) the several approaches to inorganic solid-state lighting that could conceivably achieve "ultra-high," 70% or greater, efficiency, and (b) the significant research questions and challenges that would need to be addressed if one or more of these approaches were to be realized.

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Section: Extended Defectsmentioning

confidence: 99%

Research challenges to ultra‐efficient inorganic solid‐state lighting

Phillips¹,

Coltrin

Crawford

et al. 2007

Laser & Photonics Reviews

375

268

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show abstract

“…At this time, silicon, sapphire, GaN, AlN GaAs, InAs, GaP, InP as well as spinel substrates like MgAl 2 O 4 and LiGaO 2 were investigated. Since 2003, InN growth was also performed on SiC 36–39, silica glass 40, yttria stabilized zirconia 41, (Mn, Zn)Fe 2 O 4 42, germanium 43, and AlPO 4 44. However, sapphire, GaN, AlN, and to a lower extent silicon and SiC are the most often used substrates up to date.…”

Section: Introductionmentioning

confidence: 99%

Recent advances in the MOVPE growth of indium nitride

Ruffenach

Moret

Briot

et al. 2010

Physica Status Solidi (a)

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Since a few years, indium nitride promising properties for device applications have attracted much attention worldwide. Huge efforts are dedicated to optimize indium nitride growth. However, this growth is extremely challenging, in particular using the metal organic vapor phase epitaxy (MOVPE) technique which exhibits very low growth rates. This may explain why most of the samples available in the scientific community, which also present the best electrical properties, were grown by molecular beam epitaxy (MBE). However, up to date, no intrinsic indium nitride layer was obtained. InN epilayer crystalline quality suffers from the lack of lattice matched substrates, leading to the use of double‐step growth process. In this paper, we show that InN low lateral growth rate is a limiting parameter for efficient double‐step growth process. But, we also report that the use of CBrCl3 during InN growth enhances the lateral growth rate. To improve the growth rate along the c‐axis, we investigate alternative precursors for both nitrogen and indium species. We show that ammonia remains the best precursor, but combined with triethylindium, the growth rate increases with optimum crystalline quality. Finally, we compare MOVPE‐grown and MBE‐grown InN layers in order to understand the difference observed on the electrical properties. We show how thermal annealing can improve the MOVPE‐grown InN layers leading to similar electrical properties than reported in MBE‐grown samples. The role of ammonia as source of hydrogen is also discussed.

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“…Pulsed laser deposition (PLD) has recently been recognized as the most suitable technique for the LT epitaxial growth of thin films, since species that are laser-ablated from a target material in PLD possess high kinetic energies. In fact, we have demonstrated the successful epitaxial growth of group III nitrides even at room temperature by PLD [8][9][10][11][12]. It has also been demonstrated that low-temperature growth allows us to use chemically vulnerable materials for the epitaxial growth of group III nitrides due to the suppression of interfacial reactions [13][14][15][16].…”

mentioning

confidence: 86%