Epitaxial growth of CuGaS2 on Si(111)

Metzner, H.; Hahn, Trudi Bellardo; Cieslak, J.; Großner, Ulrike; Reislöhner, U.; Witthuhn, W.; Goldhahn, R.; Eberhardt, J.; Gobsch, G.; Kräußlich, J.

doi:10.1063/1.1492003

Cited by 26 publications

(9 citation statements)

References 16 publications

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“…In particular, CuInS 2 with band gap of about 1.5 eV is an optimal absorber for single-junction solar cells, and CuGaS 2 with a wider gap energy has potential as a window material or blue absorber in multijunction photovoltaic devices [1,2]. These sulphur compounds have low toxicity and, as an additional advantage, cover the lattice parameter of the semiconductor silicon base material, allowing the monolithic integration of optoelectronics into silicon technology by means of epitaxially grown devices [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

CuInS₂ and CuGaS₂ thin films grown by modulated flux deposition with various Cu contents

Guillén

Herrero

2006

Physica Status Solidi (a)

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Copper indium sulphide and copper gallium sulphide thin films have been prepared using a novel modulated flux deposition process from elemental evaporation sources that were adjusted to give different cation (Cu/In or Cu/Ga) ratios ranging from 0.6 to 1.4. The crystalline structure and optical properties of the samples, as determined by X‐ray diffraction and spectrophotometry, have been analysed as a function of the overall composition. Also, the atomic distribution in the film depth has been obtained by combining X‐ray photoelectron spectroscopy and Ar+ sputter etching. An increase in copper content leads to an increase of the average crystallite size and a decrease of the structural stress, and an increase of the absorption coefficient at low energies. These effects are more pronounced for the copper gallium sulphide than for the copper indium sulphide samples for the preparation conditions used. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

CuInS₂ and CuGaS₂ thin films grown by modulated flux deposition with various Cu contents

Guillén

Herrero

2006

Physica Status Solidi (a)

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“…So far, the characteristics of CuGaS 2 single crystals have not been yet well studied. Some optical measurements (absorption, reflectivity spectra, pholuminescence and photoreflectance, Raman scattering and spectroscopic ellipsometry) were carried out on CuGaS 2 thin films and bulk samples [3][4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of the exciton gap in monocrystalline CuGaSe₂

Meeder¹,

Jäger-Waldau²,

Arushanov

et al. 2003

J. Phys.: Condens. Matter

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Single crystals of CuGaS 2 have been grown by chemical vapour transport. Their near-band gap photoluminescence properties were investigated in the temperature range of 10-300 K. The variation of the exciton gap energy with temperature was studied by means of a three-parameter thermodynamic model, the Einstein model and the Pássler model. Valúes of the band gap at T=0 K, of a dimensionless constant related to the electron-phonon coupling, and of an effective and a cutoff phonon energy have been estimated. It has also been found that the major contribution of phonons to the shift of £ g as a Keywords: function of T in CuGaS 2 is mainly from optical phonons. Chalcopyrite Photoluminescence Spectroscopy 2.42 2.44 2.46 2.48 2.50 2.52 2.54 2.56 Energy (eV)

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“…8 Meanwhile, it possesses a bandgap close to the optimum for the realization of a thin-film intermediate-band solar cell (IBSC), theoretically able to reach value of energy conversion efficiency above 46% under sun irradiation. 9 Numerous approaches developed for the fabrication of CuGaS 2 , such as metal-organic chemical vapor deposition, 10 modulated flux deposition, 11 vacuum evaporation 12,13 and molecular beam epitaxy, 14 are not suitable for large-scale production due to the expensive cost. Electrodeposition method is an appealing technique that offers lowcost equipment, efficient material utilization and scalability for largescale deposition, and has widely been employed for the deposition of elemental, binary, ternary or even more complex compound thin films.…”

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confidence: 99%

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film

Wang

Yang

et al. 2013

J. Electrochem. Soc.

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A novel technique for synthesis of CuGaS 2 solar energy thin film is presented. It is associated with double pulse electrodeposition of Cu-Ga precursor layer followed by thermal annealing treatment in sulfur atmosphere. The influence of several flexible parameters including pulse deposition potential and agitation rate on the compositions, crystal structure and morphology of the films were investigated. A relative negative shift of the higher pulse deposition potential results in the increasement of Ga content. A higher agitation rate results in higher Cu/Ga ratio and the emergence of CuS secondary phase after annealing in sulfur atmosphere. The crystal size increases with decreasing the higher pulse deposition potential. Several characterization methods including X-ray diffraction (XRD), scanning electron microscope (SEM), energy diffraction spectrum (EDS), ultraviolet-visible (UV-vis) spectra, impedance spectroscopy, and Raman spectrum are used to characterize the synthesized CuGaS 2 polycrystalline thin films. Based on the experimental results, a probable formation mechanism of the CuGaS 2 thin films was proposed and briefly discussed.The broad bandgap and high absorption coefficient offered by the chalcopyrite semiconductor materials make them attracting considerable attention on application in photovoltaic solar cells, 1 light emitting diodes, 2 hydrogen production, 3 and various nonlinear optical devices. 4 Solar cells based on polycrystalline Cu(In,Ga)Se 2 absorber layers have demonstrated the highest power conversion efficiencies of up to 20.3% in laboratory among the thin film technology. 5 However, a toxic selenium gas treatment limited large scale production. Many studies were presently focused on the exploration of chalcogenide compounds Cu(In,Ga)S 2 based solar cells which have reached a limited efficiency of below 13%. 6 For a further promotion on conversion efficiency, tandem solar cell structures are currently subject of intensive research. The ternary compound CuGaS 2 as a member of the chalcopyrite family has a bandgap energy (Eg) of around 2.45 eV and has been considered as a promising material for high efficiency tandem solar cells. 7 It also bears perspectives as a Cd-free window material for Cu(In 1−x Ga x )Se 2 type solar cell. 8 Meanwhile, it possesses a bandgap close to the optimum for the realization of a thin-film intermediate-band solar cell (IBSC), theoretically able to reach value of energy conversion efficiency above 46% under sun irradiation. 9 Numerous approaches developed for the fabrication of CuGaS 2 , such as metal-organic chemical vapor deposition, 10 modulated flux deposition, 11 vacuum evaporation 12,13 and molecular beam epitaxy, 14 are not suitable for large-scale production due to the expensive cost. Electrodeposition method is an appealing technique that offers lowcost equipment, efficient material utilization and scalability for largescale deposition, and has widely been employed for the deposition of elemental, binary, ternary or even more complex compound thin films....

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Epitaxial growth of CuGaS2 on Si(111)

Cited by 26 publications

References 16 publications

CuInS₂ and CuGaS₂ thin films grown by modulated flux deposition with various Cu contents

CuInS₂ and CuGaS₂ thin films grown by modulated flux deposition with various Cu contents

Temperature dependence of the exciton gap in monocrystalline CuGaSe₂

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film

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Epitaxial growth of CuGaS2 on Si(111)

Cited by 26 publications

References 16 publications

CuInS2 and CuGaS2 thin films grown by modulated flux deposition with various Cu contents

CuInS2 and CuGaS2 thin films grown by modulated flux deposition with various Cu contents

Temperature dependence of the exciton gap in monocrystalline CuGaSe2

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS2Solar Energy Thin Film

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Product

Resources

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CuInS₂ and CuGaS₂ thin films grown by modulated flux deposition with various Cu contents

CuInS₂ and CuGaS₂ thin films grown by modulated flux deposition with various Cu contents

Temperature dependence of the exciton gap in monocrystalline CuGaSe₂

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film