New doubleheterostructure indiumtin oxide/InGaAsP/AlGaAs surface lightemitting diodes at 650nm range J. Appl. Phys. 66, 2181 (1989); 10.1063/1.344315 Continuous wave operation (77 K) of yellow (583.6 nm) emitting AlGaInP double heterostructure laser diodes Appl. Phys. Lett. 48, 557 (1986); 10.1063/1.96505 AlGaAs doubleheterostructure diode lasers fabricated on a monolithic GaAs/Si substrate Appl. Phys. Lett. 45, 309 (1984); 10.1063/1.95273 Roomtemperature cw operation of buriedstripe doubleheterostructure GaInAsP/InP diode lasers