Epitaxial growth of AlGaInP lattice-matched to GaAsP substrates by organometallic vapor phase epitaxy

Lasing operation up to 200 K in the wavelength range of 570–590 nm by GaInP/AlGaInP double-heterostructure laser diodes on GaAsP substrates

“…A MOVPE-grown Ga 0.7 In 0.3 P layer on a GaAs 0.6 P 0.4 substrate has long-range ordering, which results in the lower band-gap energy in the ⌫ band. 8 The PL peak of a lattice-matched layer was obtained at 582 nm. The three lines in the figure correspond to the calculated results for unstrained, strained heavyhole ͑HH͒, and strained light-hold ͑LH͒ subbands.…”

“…Details of our growth conditions are given elsewhere. 8 The band-gap energy E g of the Ga 0.7 In 0.3 P active layer was evaluated by photoluminescence ͑PL͒ measurement. The PL peak wavelength at RT of a Ga 0.7 In 0.3 P layer was found to be around 580 nm, which corresponds to an E g larger than 2.1 eV.…”