Epitaxial Growth of 3C-SiC on Si(111) Using Hexamethyldisilane and Tetraethylsilane

Abstract

Hexamethyldisilane (HMDS, Si 2 (CH 3 ) 6 ) and tetraethylsilane (TES, Si(C 2 H 5 ) 4 ) were used as safe organosilane sources for the chemical vapor deposition of SiC films on Si(111) substrates. The surface morphology and crystalline quality of SiC films were investigated. On increasing temperature in H 2 ambient after carbonization, voids appeared at the interface of SiC/Si causing the formation of hillocks on the grown SiC films. The formation of voids was prevented by supplying C 3 H 8 and HMDS or TES during the heating process to the growth temperature, leading to the growth of SiC films with a good surface morphology. In the case of TES, the excess carbon incorporated in the film due to the high C/Si ratio was removed by reducing TES flow rate. It was found that the control of the flow rate of organosilane sources during heating plays a vital role in the formation of a high-quality SiC film with a smooth surface.

Morphology controlling of 〈111〉-3C–SiC films by HMDS flow rate in LCVD

“…Two sets of {111} reection peaks of intrinsic epitaxial domains and double position domains (DPDs), respectively, are identied in the b-scan pattern of the 3C-SiC lm deposited at f ¼ 1 sccm, indicating that the 3C-SiC lm is epitaxial. The intrinsic epitaxial domains and Si substrate has the epitaxial relationship of SiC [1-10]//Si [1][2][3][4][5][6][7][8][9][10] and SiC [111]//Si [111]. DPDs rotate around a 180 -h111i axis compared to intrinsic epitaxial domains.…”

“…The at top of the grains was parallel to the (111) lattice plane, and the direction on the side of the top is parallel to the [110] azimuth, which is a typical morphology of epitaxial h111i-3C-SiC. 10,11 At f ¼ 2 sccm, the lm shows whisker-like surface morphology ( Fig. 2(b)).…”

Heteroepitaxial 3C-SiC on Si with Various Carbonization Process Conditions

“…It has been reported that increasing the carbonization temperature enhances void occurrence and enlarges its dimension. 10,11 Some voids should 1 1100 300 1250 3 2 2 1100 300 1150 3 2 3 700 300 1250 3 2 4 700 300 1150 3 2 5 700 300 1150 15 2 be sealed by coalescence through continuing lateral growth of each SiC nucleus, but some voids should not be sealed completely by thin buffer layers during the carbonization process. These unsealed voids play a role as an open channel for silicon outdiffusion during subsequent 3C-SiC growth, causing excess growth of Si-rich SiC near the void.…”

Heteroepitaxial Growth of Single 3C-SiC Thin Films on Si (100) Substrates Using a Single-Source Precursor of Hexamethyldisilane by APCVD

“…This result was consistent with previously reported data. 17 However, no other peaks were detected from the XRD spectra, indicating that single-crystalline cubic SiC (100) films were heteroepitaxially grown on the Si (100) substrate from a single-precursor of HMDS at 1350 o C. Moreover, an X-ray rocking curve measurement of the grown 3C-SiC films was carried out and the full width at half maximum (FWHM) of the films was examined. The direction of incidence of X-ray was parallel to the <110> azimuth of the substrate.…”