Epitaxial Growth of 1D Atomic Chain Based Se Nanoplates on Monolayer ReS<sub>2</sub> for High‐Performance Photodetectors

Qin, Jiaqian; Qiu, Gang; He, Wen; Jian, Jie; Si, Mengwei; Duan, Yuqin; Charnas, Adam; Zemlyanov, Dmitry; Wang, Haiyan; Shao, Wen‐Zhu; Zhen, Liang; Ye, Peide D.

doi:10.1002/adfm.201806254

Cited by 55 publications

(41 citation statements)

References 46 publications

(57 reference statements)

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“…Mixed‐dimensional heterostructures based on ReS 2 are also attractive future applications. Qin et al demonstrated a mixed‐dimensional Se/ReS 2 heterostructure with the method of epitaxial growth. 1D van der Waals Se formed as nanoplates could be epitaxially grown on monolayer ReS 2 by a two‐step vapor deposition process.…”

Section: Preparation Methodsmentioning

confidence: 99%

Electronic and Optoelectronic Applications Based on ReS₂

Xiong

Chen

Zhang

et al. 2019

Physica Rapid Research Ltrs

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With continuous research into two‐dimensional transition metal dichalcogenides (TMDs), a great number of high‐performance devices are emerging due to the unique structures and versatile properties of TMDs. As a representative of the group‐VII TMDs, rhenium disulfide (ReS2) has attracted increasing attention because the distorted octahedral crystal structure makes it distinctive from more widely known TMDs members, such as MoS2 and WSe2. It features layer‐independent electrical and anisotropic optical properties which are suitable for the applications of field effect transistors (FETs) and photodetectors. This review focuses on the recent research work about the electronic and optoelectronic applications based on novel 2D ReS2. In the first part, the unique crystal structures and properties are introduced. This is followed by the various preparation methods. Next, high‐performance FETs and photodetectors based on ReS2 are presented. Finally, conclusions are drawn and prospects proposed.

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Section: Preparation Methodsmentioning

confidence: 99%

Electronic and Optoelectronic Applications Based on ReS₂

Xiong

Chen

Zhang

et al. 2019

Physica Rapid Research Ltrs

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“…Reproduced with permission. [108] Copyright 2018, WILEY-VCH Verlag GmbH & Co. KGaA. the experimental investigation on the properties of group-VI compounds and the corresponding device applications have not yet been conducted.…”

Section: Heterostructuresmentioning

confidence: 99%

“…Qin et al reported experimental demonstration of Se/ReS 2 heterostructure. [108] The Se nanoplates are epitaxially grown on ReS 2 flakes by two-step vapor deposition. The phototransistors fabricated with Se/ReS 2 heterostructure (Figure 7f) present photoresponse from 322 to 633 nm wavelength ( Figure 7g) with fast response time less than 10 ms.…”

Section: Heterostructuresmentioning

confidence: 99%

Emerging Group‐VI Elemental 2D Materials: Preparations, Properties, and Device Applications

Lin

Wang

Chai

2020

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to micrometers or wafer scale. With different compositions and crystal structures, these 2D materials differ from each other in properties, offering wide range of material choices for diverse functionalities, including electronics, optoelectronics, sensors, energy conversion, and storage. [14-21] As Si transistors approach their scaling limit, the loss of gate electrostatic control on the nanoscale channel and the direct source-to-drain tunneling increase the off-state leakage currents, raise power dissipation, and thus severely degrade the performance of Si transistors. [22-25] Because of this scaling limit of Si transistors, exploration of new channel materials is of vital importance for future nanoelectronics. Due to the ultrathin thickness and dangling-bond-free surface, the emerging 2D materials are promising candidates for continuously downward scaling. [26] The diversity of 2D materials provides broad choices of semimetals (e.g., graphene), insulators (e.g., h-BN), and semiconductors (e.g., TMDs, BP, Se, Te). [8-13] The 2D semiconductors with thickness-dependent bandgaps have been regarded as potential channel materials for replacing Si. [26] The layered nature of 2D semiconductors allows consistent thickness control with atomic precision down to the monolayer limit, leading to enhanced electrostatic control of the gate and further scaling of transistors. Also, the pristine surfaces of 2D semiconductors are free of dangling bonds even down to monolayer limit. The pristine surfaces can give rise to low density of interface trap states and consequently reduce the charge scattering. Taking TMDs as an example, molybdenum disulfide (MoS 2), one of the most widely studied 2D semiconductors is a potential replacement for Si. [27-29] Based on theoretical calculation, 2D MoS 2 is predicted to have a direct source-to-drain tunneling leakage current two orders of magnitude smaller than that of Si. [22] For monolayer MoS 2 , the leakage current will not limit the scaling of transistors down to 1 nm gate length, which is superior to Si with a sub-5 nm scaling limit. [22] With the unique layer nature, 2D semiconductors alleviate the severe short channel effect. Therefore, 2D semiconductors have been regarded as potential options for transistors with ultimate thin channel. After realizing advantages of 2D semiconductors over Si, numerous research studies focus on searching for 2D semiconductors with high carrier mobility and an appropriate bandgap and exploring their usage in future nanoelectronics. Due to the ultrathin thickness and dangling-bond-free surface, 2D materials have been regarded as promising candidates for future nanoelectronics. In recent years, group-VI elemental 2D materials have been rediscovered and found superior in electrical properties (e.g., high carrier mobility, high photoconductivity, and thermoelectric response). The outstanding semiconducting properties of group-VI elemental 2D materials enable device applications including high-performance field-effect transistors and optoelectronic devices. ...

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“…For instance, the heterostructures based on topological bismuthene and superconducting materials such as NbSe 2 can be utilized to exploit the theoretically predicted Majorana fermions. Moreover, similar to WS 2 / CsPbBr 3 , the hybridization of some stable monoelemental materials with 2D materials (such as TMCs) is also a potential strategy to enhance optoelectronic performance [200][201][202]. For example, Ye et al developed the epitaxial growth of Se nanoplates on the monolayer ReS 2 , where the obtained heterostructures exhibit ultrahigh optoelectronic performance [202].…”

Section: Performance Improvementmentioning

confidence: 99%

Novel two-dimensional monoelemental and ternary materials: growth, physics and application

et al. 2020

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Abstract Two-dimensional (2D) materials have undergone a rapid development toward real applications since the discovery of graphene. At first, graphene is a star material because of the ultrahigh mobility and novel physics, but it always suffered from zero bandgap and limited device application. Then, 2D binary compounds such as transition-metal chalcogenides emerged as complementary materials for graphene due to their sizable bandgap and moderate electrical properties. Recently, research interests have turned to monoelemental and ternary 2D materials. Among them, monoelemental 2D materials such as arsenic (As), antimony (Sb), bismuth (Bi), tellurium (Te), etc., have been the focus. For example, bismuthene can act as a 2D topological insulator with nontrivial topological edge states and high bulk gap, providing the novel platforms to realize the quantum spin-Hall systems. Meanwhile, ternary 2D materials such as Bi2O2Se, BiOX and CrOX (X=Cl, Br, I) have also emerged as promising candidates in optoelectronics and spintronics due to their extraordinary mobility, favorable band structures and intrinsic ferromagnetism with high Curie temperature. In this review, we will discuss the recent works and future prospects on the emerging monoelemental and ternary materials in terms of their structure, growth, physics and device applications.

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Epitaxial Growth of 1D Atomic Chain Based Se Nanoplates on Monolayer ReS₂ for High‐Performance Photodetectors

Cited by 55 publications

References 46 publications

Electronic and Optoelectronic Applications Based on ReS₂

Electronic and Optoelectronic Applications Based on ReS₂

Emerging Group‐VI Elemental 2D Materials: Preparations, Properties, and Device Applications

Novel two-dimensional monoelemental and ternary materials: growth, physics and application

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Epitaxial Growth of 1D Atomic Chain Based Se Nanoplates on Monolayer ReS2 for High‐Performance Photodetectors

Cited by 55 publications

References 46 publications

Electronic and Optoelectronic Applications Based on ReS2

Electronic and Optoelectronic Applications Based on ReS2

Emerging Group‐VI Elemental 2D Materials: Preparations, Properties, and Device Applications

Novel two-dimensional monoelemental and ternary materials: growth, physics and application

Contact Info

Product

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Epitaxial Growth of 1D Atomic Chain Based Se Nanoplates on Monolayer ReS₂ for High‐Performance Photodetectors

Electronic and Optoelectronic Applications Based on ReS₂

Electronic and Optoelectronic Applications Based on ReS₂