Epitaxial growth and thermoelectric properties of c-axis oriented Bi<sub>1−x</sub>Pb<sub>x</sub>CuSeO single crystalline thin films

Wu, Xiaolin; Wang, Jianglong; Zhang, Hongrui; Wang, Shufang; Zhai, Shengjun; Li, Yaguang; Dogheche, Elhadj; Fu, Guangsheng

doi:10.1039/c5ce01701g

Cited by 19 publications

(23 citation statements)

References 31 publications

(37 reference statements)

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“…Figure shows that the room temperature ρ ab and S ab of the film are about 14 mΩ cm and 210 μV/K, respectively, which are comparable to those of high‐quality epitaxial thin‐film samples grown on SrTiO 3 single‐crystal substrate . Moreover, the room temperature ρ ab of the present film is found to be much lower than those obtained from polycrystalline bulks (~0.1–40Ω·cm) as well as the recently reported value for single‐crystal samples (~90–770 mΩ·cm) .…”

Section: Resultssupporting

confidence: 79%

Growth of c‐Axis‐Oriented BiCuSeO Thin Films Directly on Si Wafers

Gao

Roussel

et al. 2016

J. Am. Ceram. Soc.

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Single-phase, c-axis-oriented BiCuSeO thin films have been directly grown on the commercial silicon (001) wafers without any surface pretreatment by using pulsed laser deposition. Xray diffraction pole figure confirms that the film does not have any ab-plane texture, whereas cross-sectional transmission electron microscopy shows good crystallinity of the film even if there exists an amorphous native oxide layer on the wafers surface. At room temperature, the resistivity of the film is about 14 mΩ cm, which is much lower than that reported for corresponding single crystals as well as polycrystalline bulks. This work demonstrates the possibility of using the available stateof-the-art silicon processing techniques to create BiCuSeObased thin-film thermoelectric devices.

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Section: Resultssupporting

confidence: 79%

Growth of c‐Axis‐Oriented BiCuSeO Thin Films Directly on Si Wafers

Gao

Roussel

et al. 2016

J. Am. Ceram. Soc.

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“…BiCuSeO crystals with a typical size of 2.5 × 2 × 0.05 mm 3 were obtained [45]. Meanwhile, Wu et al [46] synthesized Bi 1− x Pb x CuSeO film with high texture orientation through the pulsed laser deposition technique on the SrTiO 3 (001) substrates, a high power factor of ~1.2 mW·m −1 ·K −2 at 673 K was realized. Therefore, a higher ZT can be expected in BiCuSeO single crystals.…”

Section: A Short Review For Various Attempts To Optimize Bicuseo Smentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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BiCuSeO Thermoelectrics: An Update on Recent Progress and Perspective

et al. 2017

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A BiCuSeO system has been reported as a promising thermoelectric material and has attracted great attention in the thermoelectric community since 2010. Recently, several remarkable studies have been reported and the ZT of BiCuSeO was pushed to a higher level. It motivates us to systematically summarize the recent reports on the BiCuSeO system. In this short review, we start with several attempts to optimize thermoelectric properties of BiCuSeO. Then, we introduce several opinions to explore the origins of low thermal conductivity for BiCuSeO. Several approaches to enhance thermoelectric performance are also summarized, including modulation doping, introducing dual-vacancies, and dual-doping, etc. At last, we propose some possible strategies for enhancing thermoelectric performance of BiCuSeO in future research.

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“…However, BiCuSeO-based thin film fabrication is challenging due to the difficulty of controlling a stoichiometry transfer of such complex structures and the presence of volatile elements of Bi and Se. So far, there have been only very few reports on thin film growth and thermoelectric properties [26–28]. In this paper, c -axis-oriented Ba-doped BiCuSeO thin films were grown on SrTiO 3 (001) substrates by pulsed laser deposition, and the effects of Ba doping on the structure, valence state of elements, and TE properties of the films were investigated.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Thermoelectric Performance of c-Axis-Oriented Epitaxial Ba-Doped BiCuSeO Thin Films

et al. 2018

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We reported the epitaxial growth of c-axis-oriented Bi1−xBaxCuSeO (0 ≤ x ≤ 10%) thin films and investigated the effect of Ba doping on the structure, valence state of elements, and thermoelectric properties of the films. X-ray photoelectron spectroscopy analysis reveal that Bi3+ is partially reduced to the lower valence state after Ba doping, while Cu and Se ions still exist as + 1 and − 2 valence state, respectively. As the Ba doping content increases, both resistivity and Seebeck coefficient decrease because of the increased hole carrier concentration. A large power factor, as high as 1.24 mWm−1 K−2 at 673 K, has been achieved in the 7.5% Ba-doped BiCuSeO thin film, which is 1.5 times higher than those reported for the corresponding bulk samples. Considering that the nanoscale-thick Ba-doped films should have a very low thermal conductivity, high ZT can be expected in the films.Electronic supplementary materialThe online version of this article (10.1186/s11671-018-2752-6) contains supplementary material, which is available to authorized users.

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Epitaxial growth and thermoelectric properties of c-axis oriented Bi_1−xPb_xCuSeO single crystalline thin films

Abstract: Enhanced thermoelectric performance of c-axis oriented Bi1−xPbxCuSeO single crystalline thin films.

Cited by 19 publications

References 31 publications

Growth of c‐Axis‐Oriented BiCuSeO Thin Films Directly on Si Wafers

Growth of c‐Axis‐Oriented BiCuSeO Thin Films Directly on Si Wafers

BiCuSeO Thermoelectrics: An Update on Recent Progress and Perspective

Enhanced Thermoelectric Performance of c-Axis-Oriented Epitaxial Ba-Doped BiCuSeO Thin Films

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Epitaxial growth and thermoelectric properties of c-axis oriented Bi1−xPbxCuSeO single crystalline thin films

Abstract: Enhanced thermoelectric performance of c-axis oriented Bi1−xPbxCuSeO single crystalline thin films.

Cited by 19 publications

References 31 publications

Growth of c‐Axis‐Oriented BiCuSeO Thin Films Directly on Si Wafers

Growth of c‐Axis‐Oriented BiCuSeO Thin Films Directly on Si Wafers

BiCuSeO Thermoelectrics: An Update on Recent Progress and Perspective

Enhanced Thermoelectric Performance of c-Axis-Oriented Epitaxial Ba-Doped BiCuSeO Thin Films

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Epitaxial growth and thermoelectric properties of c-axis oriented Bi_1−xPb_xCuSeO single crystalline thin films