Epitaxial Growth and Polarity of ZnO Films on Sapphire (0001) Substrates by Low-Pressure Metal Organic Chemical Vapor Deposition

Zhang, Baoping; Manh, L. H.; Wakatsuki, K.; Ohnishi, T.; Lippmaa, Mikk; Usami, Noritaka; Kawasaki, Masashi; Segawa, Y.

doi:10.1143/jjap.42.2291

Cited by 34 publications

(26 citation statements)

References 3 publications

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“…Detailed growth conditions are given in Ref. [11]. The MOCVD-ZnO layers had Zn-polarity, which was confirmed by coaxial impact collision ion scattering spectroscopy (CAICISS).…”

Section: Methodsmentioning

confidence: 77%

“…Recently, Zn-polarity ZnO growth on c-plane sapphire was achieved by using metal-organic chemical vapor deposition (MOCVD) [11], where an MOCVD-grown ZnO layer with Zn-polarity was used as a template for the molecular beam epitaxy (MBE) growth of ZnO. In this study, high-quality Zn-polar ZnO epilayers were grown on MOCVD-ZnO templates by using plasma-assisted MBE.…”

Section: Introductionmentioning

confidence: 99%

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MBE growth of Zn‐polar ZnO on MOCVD‐ZnO templates

Kato

Sano

Miyamoto

et al. 2004

Physica Status Solidi (b)

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High-quality Zn-polar ZnO films were grown on metal-organic chemical-vapor deposition (MOCVD) grown ZnO/a-sapphire templates by plasma-assisted molecular beam epitaxy (MBE). Annealing of the MOCVD-ZnO layer in an O 2 atmosphere improved the surface roughness and crystallinity of the template. Reflection high-energy electron diffraction and atomic force microscopy observations revealed that MBE-ZnO maintained its Zn-polarity, which is the polarity of the underlying MOCVD-ZnO, and that the optimized growth condition is the O-rich flux regime. Structural and optical properties of the MBE-ZnO films were significantly improved by growth under O-rich flux condition and introducing a lowtemperature ZnO buffer. The line widths of (0002) and (10 10) X-ray ω-rocking curves for MBE-ZnO films were 533 and 582 arcsec, respectively. The ground and excited (n = 2) states of A-exciton were clearly evident at 3.377 and 3.423 eV in low-temperature (4.2 K) photoluminescence of the Zn-polar ZnO film.

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“…Detailed growth conditions are given in Ref. [11]. The MOCVD-ZnO layers had Zn-polarity, which was confirmed by coaxial impact collision ion scattering spectroscopy (CAICISS).…”

Section: Methodsmentioning

confidence: 77%

Section: Introductionmentioning

confidence: 99%

MBE growth of Zn‐polar ZnO on MOCVD‐ZnO templates

Kato

Sano

Miyamoto

et al. 2004

Physica Status Solidi (b)

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“…Electrons with the energy of 10 kV stop at the depth of ∼740 nm [5] and thus penetrate through the nanotubes; their CL signals are averaged over the nanotube thickness. The spectra consist of two peaks at 369 and 374 nm which are attributed to neutral donor excitonic emission (D 0 X) and donor-acceptor pairs (DAP) transitions, respectively [41,42]. We can assume that the intensities of the 369 nm (D 0 X) and 374 nm (DAP) signals reflect the concentrations of donors and acceptors, respectively, at least for small defect concentrations.…”

Section: Depth Distributionmentioning

confidence: 99%

Low-energy cathodoluminescence microscopy for the characterization of nanostructures

Dierre

Yuan

Sekiguchi

2010

Science and Technology of Advanced Materials

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Spatially and spectrally resolved low-energy cathodoluminescence (CL) microscopy was applied to the characterization of nanostructures. CL has the advantage of revealing not only the presence of luminescence centers but also their spatial distribution. The use of electrons as an excitation source allows a direct comparison with other electron-beam techniques. Thus, CL is a powerful method to correlate luminescence with the sample structure and to clarify the origin of the luminescence. However, caution is needed in the quantitative analysis of CL measurements. In this review, the advantages of cathodoluminescence for qualitative analysis and disadvantages for quantitative analysis are presented on the example of nanostructures.

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“…However, ZnO is naturally an n-type semiconductor because of a deviation from stoichiometry due to the presence of intrinsic point defects such as O vacancies (V O ) and Zn interstitials (Zn i ). Most ZnO epitaxial layers were grown by molecular beam epitaxy (MBE) [1][2][3][4] or metal organic chemical vapor deposition (MOCVD) [5][6][7][8]. Besides, the growth technique of atomic layer epitaxy (ALE) is thought to be effective to realize p-type ZnO, because impurity incorporation can be precisely controlled.…”

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confidence: 99%

Effects of GaN template on atomic‐layer‐epitaxy growth of ZnO

Saito

Nagayama

Hosokai

et al. 2004

phys. stat. sol. (c)

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ZnO layer was epitaxially grown on GaN template by atomic layer epitaxy (ALE) using Diethylzinc (DEZ) and H 2 O at the growth temperature of 250 ℃. By reflection high-energy electron diffraction (RHEED) measurements, spotty pattern was observed for the ZnO layer directly grown on c-plane sapphire substrate, while streaky pattern was observed for that grown on GaN template. Full-width at halfmaximum (FWHM) value of (0002) X-ray rocking curve of ZnO layer was greatly reduced from 4.96° to 0.103° by using GaN template. By photoluminescence (PL) measurements, only the near bandedge emissions were observed. FWHM of the neutral-donor-bound-exciton (D 0 X) emission line was reduced from 18.7 to 16.1 meV by using GaN template.

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Epitaxial Growth and Polarity of ZnO Films on Sapphire (0001) Substrates by Low-Pressure Metal Organic Chemical Vapor Deposition

Abstract: Bijective mappings of matrix representations are used to derive generating relations for Clebsch-Gordon coefficients and to reduce the multiplicity problem.

Cited by 34 publications

References 3 publications

MBE growth of Zn‐polar ZnO on MOCVD‐ZnO templates

MBE growth of Zn‐polar ZnO on MOCVD‐ZnO templates

Low-energy cathodoluminescence microscopy for the characterization of nanostructures

Effects of GaN template on atomic‐layer‐epitaxy growth of ZnO

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