ZnO layer was epitaxially grown on GaN template by atomic layer epitaxy (ALE) using Diethylzinc (DEZ) and H 2 O at the growth temperature of 250 ℃. By reflection high-energy electron diffraction (RHEED) measurements, spotty pattern was observed for the ZnO layer directly grown on c-plane sapphire substrate, while streaky pattern was observed for that grown on GaN template. Full-width at halfmaximum (FWHM) value of (0002) X-ray rocking curve of ZnO layer was greatly reduced from 4.96° to 0.103° by using GaN template. By photoluminescence (PL) measurements, only the near bandedge emissions were observed. FWHM of the neutral-donor-bound-exciton (D 0 X) emission line was reduced from 18.7 to 16.1 meV by using GaN template.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.