Epitaxial growth and magnetic properties of single-crystal Co2MnGe Heusler alloy films on GaAs (001)

Ambrose, T.; Krebs, J. J.; Prinz, G. A.

doi:10.1063/1.126606

Cited by 169 publications

(85 citation statements)

References 18 publications

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“…This can be explained by a model in which ͑i͒ uniaxial anisotropy imposed by the GaAs symmetry with an easy axis of either the GaAs͓110͔ or ͓1−10͔ direction and ͑ii͒ cubic anisotropy imposed by the Co 2 YZ with easy axes of Co 2 YZ͗110͘ are superimposed. [14][15][16] In our case, the easy axis direction of the uniaxial anisotropy was along the GaAs͓1−10͔ direction. When the MgO interlayer was inserted, the uniaxial anisotropy was weakened ͓Fig.…”

Section: Methodsmentioning

confidence: 69%

Structural, magnetic, and electrical properties of Co2MnSi∕MgO∕n-GaAs tunnel junctions

Kawagishi

Uemura

Imai

et al. 2008

Journal of Applied Physics

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The structural, magnetic, and electrical properties of Co 2 MnSi ͑CMS͒/MgO ͑0 -3.0 nm͒ / n-GaAs tunnel junctions were investigated. CMS films with L2 1 -ordered structures were grown epitaxially on GaAs. The crystallographic relations were CMS͑001͓͒100͔ ʈ GaAs͑001͓͒110͔ when a thin MgO interlayer was inserted between the CMS and the GaAs, and CMS͑001͓͒110͔ ʈ GaAs͑001͓͒110͔ when the CMS film was directly grown on GaAs without a MgO interlayer. The CMS film without a MgO interlayer showed strong magnetic anisotropy consisting of uniaxial anisotropy with an easy axis of CMS͓1−10͔ ͑GaAs͓1−10͔͒ direction and cubic anisotropy with easy axes of CMS͗110͘ directions. The uniaxial anisotropy was weakened in the samples with a MgO interlayer. The magnetization value of the CMS film with a 3.0-nm-thick MgO layer was approximately 820 emu/ cm 3 ͑3.9 B / f.u.͒ at room temperature ͑RT͒, a value slightly higher ͑ϳ7%͒ than that of the sample without MgO. The resistance value of the CMS/MgO ͑3.0 nm͒ / n-GaAs junction was approximately two to three orders of magnitude higher than that of the CMS/ n-GaAs junction at RT. The potential height and width of the tunnel barrier in the CMS/ MgO / n-GaAs junction were estimated to be 0.6 eV and 3.3 nm, respectively.

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Section: Methodsmentioning

confidence: 69%

Structural, magnetic, and electrical properties of Co2MnSi∕MgO∕n-GaAs tunnel junctions

Kawagishi

Uemura

Imai

et al. 2008

Journal of Applied Physics

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“…14͒ or other Heusler materials on GaAs. 15,17 This can be explained with the model in which ͑i͒ uniaxial anisotropy imposed by the GaAs symmetry with an easy axis of either the ͓110͔ GaAs or ͓1 −10͔ GaAs direction and ͑ii͒ cubic anisotropy imposed by the CCFA with easy axes of ͗110͘ CCFA are superimposed. 17,18 In our case, the uniaxial anisotropy with its easy axis in the ͓110͔ GaAs direction was dominant compared to the cubic anisotropy, as we will later show.…”

Section: B Magnetic Propertiesmentioning

confidence: 99%

Effect of a MgO interlayer on the structural and magnetic properties of Co2Cr0.6Fe0.4Al thin films epitaxially grown on GaAs substrates

Yano

Uemura

Matsuda

et al. 2007

Journal of Applied Physics

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The effect of a MgO interlayer on the structural and magnetic properties of Co 2 Cr 0.6 Fe 0.4 Al ͑CCFA͒ thin films epitaxially grown on GaAs substrates by sputtering was investigated. When the MgO interlayer thickness was 1.0 nm or less, the CCFA films were grown with a cube-on-cube relation to GaAs and no significant decrease in either the x-ray diffraction intensity or saturation magnetization was observed. In contrast, when the MgO thickness was 1.5 nm or more, the CCFA film was rotated by 45°in the ͑001͒ plane with respect to GaAs, and both the x-ray diffraction intensity and saturation magnetization decreased. All samples showed strong magnetic anisotropy, in which a uniaxial anisotropy with an easy axis of ͓110͔ GaAs or ͓1−10͔ GaAs dominated with a slight cubic anisotropy having an easy axis of ͗110͘ CCFA superimposed.

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“…But Brown et al [30] using polarized neutron diffraction measurements have shown that there is a finite very small spin-down DOS at the Fermi level instead of an absolute gap. Recently, Ambrose et al managed to grow a Co 2 MnGe thin film on a GaAs(001) substrate by molecular beam epitaxy [31], and Geiersbach et al grew by sputtering (110) thin films of Co 2 MnSi, Co 2 MnGe and Co 2 MnSn using a metallic seed on top of a MgO(001) substrate [32].…”

Section: Introductionmentioning

confidence: 99%

Surface properties of the half-and full-Heusler alloys

Galanakis

2002

J. Phys.: Condens. Matter

231

166

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Abstract. Using a full-potential ab-initio technique I study the electronic and magnetic properties of the (001) surfaces of the half-Heusler alloys, NiMnSb, CoMnSb and PtMnSb and of the full-Heusler alloys Co 2 MnGe, Co 2 MnSi and Co 2 CrAl. The MnSb terminated surfaces of the half-Heusler compounds present properties similar to the bulk compounds and, although the half-metallicity is lost, an important spinpolarisation at the Fermi level. In contrast to this the Ni terminated surface shows an almost zero net spin-polarisation. While the bulk Co 2 MnGe and Co 2 MnSi are almost half-ferromagnetic, their surfaces lose the half-metallic character and the net spin-polarisation at the Fermi level is close to zero. Contrary to these compounds the CrAl terminated (001) surface of Co 2 CrAl shows a spin polarisation of about 84%.

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Epitaxial growth and magnetic properties of single-crystal Co2MnGe Heusler alloy films on GaAs (001)

Cited by 169 publications

References 18 publications

Structural, magnetic, and electrical properties of Co2MnSi∕MgO∕n-GaAs tunnel junctions

Structural, magnetic, and electrical properties of Co2MnSi∕MgO∕n-GaAs tunnel junctions

Effect of a MgO interlayer on the structural and magnetic properties of Co2Cr0.6Fe0.4Al thin films epitaxially grown on GaAs substrates

Surface properties of the half-and full-Heusler alloys

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