Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage

Amjadipour, Mojtaba; MacLeod, Jennifer; Lipton‐Duffin, Josh; Iacopi, Francesca; Motta, Nunzio

doi:10.1088/1361-6528/aa752e

Cited by 9 publications

(8 citation statements)

References 59 publications

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“…A NW was moved and transferred by a weasel hair and then fixed by conductive Ag epoxy in air (Figures and ). This approach eliminates contaminations induced by traditional beam depositions. − Healed mismatched amorphous fractured surfaces of a NW are observed in Figure b. Healing on mismatched amorphous fractured brittle NWs was characterized and measured, by in situ TEM fracture tests, as illustrated in Figures –.…”

Section: Discussionmentioning

confidence: 99%

“…However, to the best of our knowledge, nanomechanical testing on mismatched fractured brittle NWs has not been reported. Additionally, focused-ion-beam (FIB) and electron beam depositions are widely employed to fix and connect NWs in transmission electron microscopy (TEM). − Nevertheless, the two depositions readily induce damages and contaminations on the NWs that affect performance . Using deposition techniques on NWs, the measured results by nanomechanical testing have risks in reliability and robust design of high performance NW devices.…”

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confidence: 99%

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Ultrahigh Recovery of Fracture Strength on Mismatched Fractured Amorphous Surfaces of Silicon Carbide

et al. 2019

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Nanowires (NWs) have been envisioned as building blocks of nanotechnology and nanodevices. In this study, NWs were manipulated using a weasel hair, and fixed by conductive silver epoxy, eliminating the contaminations and damages induced by conventional beam depositions. The fracture strength of the amorphous silicon carbide was found to be 8.8 GPa, which was measured by in situ transmission electron microscopy nanomechanical testing, approaching the theoretical fracture limit. Here, we report that self-healing of mismatched fractured amorphous surfaces of brittle NWs was discovered. The fracture strength was found to be 5.6 GPa on the mismatched fractured surfaces, recovering 63.6% of that of pristine NWs. This is an ultrahigh recovery, due to the limits of reconstruction of dangling bonds on the fractured amorphous surfaces and the mismatched areas. Simulation by molecular dynamics showed fracture strength recovery of 65.9% on the mismatched fractured amorphous surfaces, which is in good agreement with the experimental results. Healing on the mismatched fractured amorphous surfaces is by reorganization of Si-C bonds forming Si-C and Si-Si bonds. The potential energy increases 2.6 eV in the reorganized Si-C bonds, and decreases by 3.2 and 1.9 eV, respectively, in the formed Si-C and Si-2 Si bonds. These findings provide insights for the reliability, design and fabrication of high performance NW-based devices, to avoid catastrophic failure working in harsh and extreme environments.

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Section: Discussionmentioning

confidence: 99%

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confidence: 99%

Ultrahigh Recovery of Fracture Strength on Mismatched Fractured Amorphous Surfaces of Silicon Carbide

et al. 2019

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“…Atomic hydrogen exposure was achieved using EFM-H atomic hydrogen source (FOCUS GmbH) operating at an apparent chamber pressure of ∼5×10 −6 mbar and 40 W power. Atomic hydrogen etching assists with elimination of contamination and improving the flatness of the SiC surface, and has been routinely employed as a preparation step prior to graphene fabrication [48][49][50].…”

Section: Methodsmentioning

confidence: 99%

Electron effective attenuation length in epitaxial graphene on SiC

Amjadipour¹,

MacLeod²,

Lipton‐Duffin³

et al. 2018

Nanotechnology

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The inelastic mean free path (IMFP) for carbon-based materials is notoriously challenging to model, and moving from bulk materials to 2D materials may exacerbate this problem, making the measurement of IMFP in 2D carbon materials quite critical. We present an experimental measurement for IMFP in epitaxial graphene on SiC using photoelectron spectroscopy (PES) over an electron kinetic energy range of 50-1150 eV. The results suggest that the existing models for IMFP may not adequately capture the physics of electron interactions in 2D materials. Our experimental values exceed the theoretical predictions and experimental values of the IMFP in graphite for all energies through this range. We emphasize the significant effect of interface and demonstrate that the IMFP in the so-called 'buffer layer' is smaller than for free-standing graphene.

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“…Then, a number of works demonstrating the feasibility of graphene synthesis on β-SiC/Si wafers of different orientations have been published . Mostly, these studies have been conducted on β-SiC (111) thin films [51][52][53][54][55][56][57][58][59][60][61][65][66][67][68][69][70][71][72][73][74][75][76][77][78][79][80][81] and single-crystalline SiC (111) wafers [62][63][64]. However, some studies have been carried out on β-SiC(001) [50, 61, 82-93, 101, 102] and even on polycrystalline β-SiC substrates [94].…”

Section: Introductionmentioning

confidence: 99%

Controllable Synthesis of Few-Layer Graphene on β-SiC(001)

Молодцова¹,

Чайка²,

Aristov³

2019

Silicon Materials

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Few-layer graphene exhibits exceptional properties that are of interest for fundamental research and technological applications. Nanostructured graphene with self-aligned domain boundaries and ripples is one of very promising materials because the boundaries can reflect electrons in a wide range of energies and host spinpolarized electronic states. In this chapter, we discuss the ultra-high vacuum synthesis of few-layer graphene on the technologically relevant semiconducting β-SiC/Si(001) wafers. Recent experimental results demonstrate the possibility of controlling the preferential domain boundary direction and the number of graphene layers in the few-layer graphene synthesized on the β-SiC/Si(001) substrates. Both these goals can be achieved utilizing vicinal silicon wafers with small miscuts from the (001) plane. This development may lead to fabricating new tunable electronic nanostructures made from graphene on β-SiC, opening up opportunities for new applications.

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Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage

Cited by 9 publications

References 59 publications

Ultrahigh Recovery of Fracture Strength on Mismatched Fractured Amorphous Surfaces of Silicon Carbide

Ultrahigh Recovery of Fracture Strength on Mismatched Fractured Amorphous Surfaces of Silicon Carbide

Electron effective attenuation length in epitaxial graphene on SiC

Controllable Synthesis of Few-Layer Graphene on β-SiC(001)

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