Epitaxial graphene formation on 3C-SiC/Si thin films

Suemitsu, Maki; Jiao, S.; Fukidome, Hirokazu; Tateno, Yasunori; Makabe, Isao; Nakabayashi, Takashi

doi:10.1088/0022-3727/47/9/094016

Cited by 36 publications

(28 citation statements)

References 77 publications

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“…Indeed, an out-diffusion of silicon forming typical interfacial voids, has been reported extensively in the literature. 10,16 However, the possibility for microscopic atomic carbon diffusion into the silicon matrix has been largely overlooked, as opposed to the macroscopically evident silicon voids. In fact, we note that in all samples used for this work the silicon voids were intentionally suppressed by the vendors through engineering of the heteroepitaxial process.…”

Section: Discussion and Modelmentioning

confidence: 99%

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Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Pradeepkumar

Zieliński

Bosi

et al. 2018

Journal of Applied Physics

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Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may be not realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a highresistivity silicon substrate coupled with deep recess etching in between the SiC structures.

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Section: Discussion and Modelmentioning

confidence: 99%

“…AlN layer on silicon in order to avoid the diffusion of silicon atoms from the substrate through the SiC layer, which also hampered the graphitization of the SiC surface. 10 This indicates that the instability of the SiC/Si interface affects potential applications in more than one way.…”

Section: Suemitsu Et Al Have Attempted the Growth Of Sic Onto An Intmentioning

confidence: 99%

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Pradeepkumar

Zieliński

Bosi

et al. 2018

Journal of Applied Physics

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“…Growing an epitaxial AlN layer on Si prior to SiC growth significantly reduces Si out-diffusion and helps grow higher quality epigraphene. [175] Graphene was also grown on the 3C-SiC(001) surface, which demonstrates that a hexagonal template is not required for the growth of graphene. LEED patterns show no evidence for a buffer layer (growth in Ar at 1800ºC).…”

Section: Epigraphene On 3c-sicmentioning

confidence: 96%

“…Another approach is to integrate epigraphene to Si-based electronics. The first Graphene-On-Silicon (GOS) strategy takes advantage of the heteroepitaxy growth of 3C-SiC on Si to produce epigraphene on SiC covered Si substrate (3C-SiC is the only SiC polytype known to grow on Si) [175,177,178]. Epigraphene growth on SiC/Si subtrates was discussed in Section 4.4.…”

Section: Large-scale Integration -Integration With Simentioning

confidence: 99%

Silicon carbide and epitaxial graphene on silicon carbide

Berger

Conrad

Heer

2018

Physics of Solid Surfaces

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Graphene was defined [7] by H-P Boehm in 1986, and the nomenclature was officially adopted [23] by the International Union of Pure and Applied Chemistry (IUPAC) in 1994. It reads as follows:"Graphene is a single carbon layer of the graphite structure, describing its nature by analogy to a polycyclic aromatic hydrocarbon of quasi infinite size. Previously, descriptions such as graphite layers, carbon layers or carbon sheets, graphite monolayers have been used for the term graphene. Because graphite designates that modification of the chemical element carbon, in which planar sheets of carbon atoms, each atom bound to three neighbors in a honeycomb-like structure, are stacked in a three-dimensional regular order, it is not correct to use for a single layer a term which includes the term graphite, which would imply a three-dimensional structure. The term graphene should be used only when the reactions, structural relations or other properties of individual layers are discussed." Consistent with this definition, "graphite" should be used when graphene layers are stacked in the graphitic (Bernal) structure (see Figure 1), so that "few layer graphene" is incorrect and should be referred to as "thin graphite".In practice, graphene (including transferred graphene) is usually supported on a substrate. The term "freestanding graphene" is often used to suggest the absence of substrate-induced perturbations. Some even have suggested [24] to redefine graphene accordingly: "Graphene is a single atomic plane of graphite, which-and this is essential-is sufficiently isolated from its environment to be considered freestanding".However in practice graphene on a substrate is never freestanding. Substrates always affect the properties and quite significantly so in graphene transferred on SiO2 using the "Scotch tape" method, making this alternative definition ineffective. It makes more sense to adhere to the IUPAC definition of graphene and to apply "quasifreestanding" relative to a property. For electronic properties, quasi-freestanding implies that the electronic properties are essentially identical to those of an ideal graphene sheet. A recent publication in the authoritative journal Carbon suggests the usage of more precise definitions [25].The adhesion of graphene to many substrates involving van der Waals forces and/or electrostatic forces usually minimally affects its chemical and electronic properties (see below). But the adhesion to the substrate can be strong, involving significant chemical bonding of the carbon atoms in the graphene layer to the substrate. In these cases the electronic structure (as well as planarity) will be significantly modified. Finally, graphene can also be functionalized, in which cases atoms or molecules are chemically bound to graphene carbon atoms, whereby the electronic structure is typically significantly modified. Consequently chemical functionalization and chemical bonding to a substrate are closely related. Below, examples of all three forms of graphene are presented in the context of epitaxial...

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“…However, for technological applications it is highly desirable to control the thickness of the graphene overlayer and reduce the number of the preferential NB orientations from two to one. Note that thickness of the few-layer graphene synthesized on β-SiC/Si(001) wafers by different groups, utilizing very similar UHV thermal treatment procedures, varied from one to several monolayers [50,[82][83][84][85][86][87][88][89][90][91][92][93]101].…”

Section: Large-area Stm Images Of Sic(001)-c(2 × 2) (A) and Trilayer mentioning

confidence: 99%

Controllable Synthesis of Few-Layer Graphene on β-SiC(001)

Молодцова¹,

Чайка²,

Aristov³

2019

Silicon Materials

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Few-layer graphene exhibits exceptional properties that are of interest for fundamental research and technological applications. Nanostructured graphene with self-aligned domain boundaries and ripples is one of very promising materials because the boundaries can reflect electrons in a wide range of energies and host spinpolarized electronic states. In this chapter, we discuss the ultra-high vacuum synthesis of few-layer graphene on the technologically relevant semiconducting β-SiC/Si(001) wafers. Recent experimental results demonstrate the possibility of controlling the preferential domain boundary direction and the number of graphene layers in the few-layer graphene synthesized on the β-SiC/Si(001) substrates. Both these goals can be achieved utilizing vicinal silicon wafers with small miscuts from the (001) plane. This development may lead to fabricating new tunable electronic nanostructures made from graphene on β-SiC, opening up opportunities for new applications.

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Epitaxial graphene formation on 3C-SiC/Si thin films

Cited by 36 publications

References 77 publications

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Silicon carbide and epitaxial graphene on silicon carbide

Controllable Synthesis of Few-Layer Graphene on β-SiC(001)

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