Epitaxial GaAs Kinetic Studies: {001} Orientation

Abstract

Gallium arsenide deposition rate studies were conducted with an open tube, chloride transport system which permitted independent control of the reactant input partial pressures. A recording microbalance was adapted to the deposition apparatus so that the epitaxial growth rates could be continuously measured during the actual deposition process. At low temperatures and high reactant partial pressures the process appears to be kinetically controlled. The rate then becomes inversely proportional to the gallium monochloride partial pressure and may indicate the presence of a competitive adsorption process. At high temperatures and low partial pressures the rates may be described in terms of a “quasi‐equilibrium” model where a fraction of the incoming gas stream equilibrates with the condensed phase.

Epitaxial growth of thick GaAs on orientation-patterned wafers for nonlinear optical applications

“…2). This dependence on growth rate with temperature has been reported by a number of other researchers [15]. The high-temperature behavior is consistent with a thermodynamic analysis of the HVPE processthe supersaturation of the vapor increases as the temperature is lowered, driving deposition on the substrate.…”

Growth of mm-thick orientation-patterned GaAs for IR and THZ generation

“…Shaw [23] was the first to systematically study the dependence of growth rate on temperature, and characterized two regimes of growth behavior during VPE-surface kinetics-limited at low temperatures and mass transfer-limited at high temperatures. At low temperatures, the rate-limiting process(es), such as adsorption [24] or chlorine desorption [25], are thermally activated, and the growth rate increases with increasing temperature. The behavior in the second regime results from the temperature dependence of the thermodynamic driving force and the growth rate decreases with increasing temperature.…”

More precise uniform estimates of oscillatory integrals and areas

“…There is a good qualitative agreement between our theoretical results and the experimental results reported by Shaw (1970) (1981). Figure 8 shows the comparison between our theoretical model and Shaw's experimental results (Shaw 1968). The proposed model provides a simple relation for evaluating the epitaxial growth rate of GaAs.…”

“…We have used the values of the rate constants K , K , , K Z and K 3 available in the literature (Korec andHeyen 1982, Hong andLee 1985). The value of In K , has been estimated using equation (28) for the experimental data of Shaw (1975). In figure 4 the growth rate R is depicted as a function of temperature for different values of partial pressures of GaCl and a given value of P A S 4 (= 2 x 1 0 -~ atm).…”

“…The epitaxial nucleation and growth of GaAs in the Ga-HCI-As4-H2 system has gained much importance in recent years. A considerable amount of work, experimental as well as theoretical, has been done by many researchers (Shaw 1970(Shaw , 1975 Dilorenzo and Moore 197 1, Hollan and Schiller 1974, Cadoret et ul 1975, Theeten and Hottier 1976, Arizumi 1978, Korec and Heyen 1982. Investigation of the initial stages of the epitaxy of GaAs is extremely important.…”