Epitaxial ferromagnetic Mn5Ge3 on Ge(111)

Zeng, Changgan; Erwin, Steven C.; Feldman, L. C.; Li, An‐Ping; Jin, Rui; Song, Ye; Thompson, James R.; Weitering, Hanno H.

doi:10.1063/1.1633684

Cited by 189 publications

(182 citation statements)

References 19 publications

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“…2͑e͒. Both the HRTEM image and its corresponding FFT pattern indicate the cluster belongs to the hexagonal Mn 5 Ge 3 phase, 12,17 and the crystallographic relationship between the Mn 5 Ge 3 cluster and the Ge 0.96 Mn 0.04 ͑GeMn͒ matrix can be determined as ͓001͔ Mn 5 Ge 3 ʈ ͓001͔ GeMn and ͓010͔ Mn 5 Ge 3 ʈ ͓110͔ GeMn , which is consistent with the result previously reported. 4 Our extensive HRTEM investigations suggest no other Mn-containing phases in the as-grown GeMn films.…”

supporting

confidence: 81%

Mn behavior in Ge0.96Mn0.04 magnetic thin films grown on Si

Wang

Zou

Zhao

et al. 2008

Journal of Applied Physics

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Mn behaviors in the Ge0.96Mn0.04 thin films grown on Si (001) substrates by molecular beam epitaxy were investigated by high resolution transmission electron microscopy, electron energy loss spectroscopy, and energy dispersive spectroscopy. Unlike the previously reported case of GeMn thin films grown on Ge, Mn has been found to be diffused toward to the surface during the thin film growth. When the Mn concentration is sufficiently high, Mn5Ge3 clusters may be formed. Further annealing of the high Mn concentrated thin film promotes the formation of α-Mn metallic clusters. We believe that all these extraordinary phenomena are attributed to Si as the substrate.

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confidence: 81%

Mn behavior in Ge0.96Mn0.04 magnetic thin films grown on Si

Wang

Zou

Zhao

et al. 2008

Journal of Applied Physics

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“…21 Mn 5 Ge 3 and Mn 5 Ge 3 C x (x ≈ 1) have been proposed as ferromagnetic electrodes for spintronic applications due to their ability to grow epitaxially on Si and GaAs substrates. [22][23][24][25][26] In all these Mn compounds the different magnetic structures originate from the sensitivity of the Mn moment on the local atomic environment, in particular the Mn-Mn distances which are found to be the major factor leading to different site-dependent Mn moments. 27 Here, we report on measurements of the electrical resistivity and AHE of a Mn 5 Si 3 single crystal and polycystalline thin films.…”

Section: A Hall Effect In Noncollinear Magnetic Structuresmentioning

confidence: 99%

Anomalous Hall effect in the noncollinear antiferromagnet Mn5Si3

et al. 2016

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Metallic antiferromagnets with noncollinear orientation of magnetic moments provide a playground for investigating spin-dependent transport properties by analysis of the anomalous Hall effect. The intermetallic compound Mn 5 Si 3 is an intinerant antiferromagnet with collinear and noncollinear magnetic structures due to Mn atoms on two inequivalent lattice sites. Here, magnetotransport measurements on polycrstalline thin films and a single crystal are reported. In all samples, an additional contribution to the anomalous Hall effect attributed to the noncollinear arrangment of magnetic moments is observed. Furthermore, an additional magnetic phase between the noncollinear and collinear regimes above a metamagnetic transition is resolved in the single crystal by the anomalous Hall effect. C 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx

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“…The intermetallic magnetic Mn 5 Ge 3 could provide the desired solution as it grows directly onto Ge substrate [4], therefore being compatible with existing semiconductor technology. Mn 5 Ge 3 shows ferromagnetism with a Curie temperature (T c ) around room temperature [5] and an important spin polarization (up to 42%) [6,7].…”

Section: Introductionmentioning

confidence: 99%

Ferromagnetic resonance and magnetic damping in C-doped Mn₅Ge₃

Dutoit¹,

Dolocan²,

Kuz’min³

et al. 2015

J. Phys. D: Appl. Phys.

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Abstract. Ferromagnetic resonance (FMR) was used to investigate the static and dynamic magnetic properties of carbon-doped Mn 5 Ge 3 (C 0.1 and C 0.2 ) thin films grown on Ge(111). The temperature dependence of magnetic anisotropy shows an increased perpendicular magneto-crystalline contribution at 80K with an in-plane easy axis due to the large shape contribution. We find that our samples show a small FMR linewidth (corresponding to an intrinsic magnetic damping parameter α=0.005), which is a measure of the spin relaxation and directly related with the magnetic and structural quality of the material. In the perpendicular-to-plane geometry, the FMR linewidth shows a minimum at around 200K for all the samples, which seems to be not correlated to the C-doping.Ferromagnetic resonance and magnetic damping in C-doped Mn 5 Ge 3 2The magnetic relaxation parameters have been determined and indicate the twomagnon scattering as the main extrinsic contribution. We observe a change in the main contribution from scattering centres in Mn 5 Ge 3 C 0.2 at low temperatures, which could be related to the minimum in linewidth.

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Epitaxial ferromagnetic Mn5Ge3 on Ge(111)

Cited by 189 publications

References 19 publications

Mn behavior in Ge0.96Mn0.04 magnetic thin films grown on Si

Mn behavior in Ge0.96Mn0.04 magnetic thin films grown on Si

Anomalous Hall effect in the noncollinear antiferromagnet Mn5Si3

Ferromagnetic resonance and magnetic damping in C-doped Mn₅Ge₃

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Epitaxial ferromagnetic Mn5Ge3 on Ge(111)

Cited by 189 publications

References 19 publications

Mn behavior in Ge0.96Mn0.04 magnetic thin films grown on Si

Mn behavior in Ge0.96Mn0.04 magnetic thin films grown on Si

Anomalous Hall effect in the noncollinear antiferromagnet Mn5Si3

Ferromagnetic resonance and magnetic damping in C-doped Mn5Ge3

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Ferromagnetic resonance and magnetic damping in C-doped Mn₅Ge₃