Epitaxial diamond thin films on (001) silicon substrates

Jiang, Xin; Klages, Claus‐Peter; Zachai, R.; Hartweg, M.; Füßer, Hans-Jürgen

doi:10.1063/1.109041

Cited by 308 publications

(82 citation statements)

References 7 publications

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“…This assembly enhances the bias current density when a negative bias is applied to the substrate at low microwave powers without affecting the microwave plasma. The whole growth was performed for 60 min in a single stage run without breaking the bias to the substrate, unlike the conventional two or three stages process for the heteroepitaxial growth of diamond [30,31]. Applied biasing voltage was varied from 200 to 320 V while keeping other parameters constant.…”

Section: Biased Enhanced Growth Of Ncd Filmsmentioning

confidence: 99%

Precursors for CVD Growth of Nanocrystalline Diamond

2004

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Variuos routes to grow nanocrystalline diamond films by chemical vapor deposition technique are reviewed. Among various routes, NCD films deposited on mirror polished silicon substrates by biased enhanced growth by microwave plasma chemical vapor deposition are described in detail. Qualitative concentration of NCD was assessed by Raman spectroscopy and X-ray diffraction patterns of the films. The hardness of the films approaches to that of natural diamond at optimized conditions while still having low amount of stress (< 1 GPa).

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Section: Biased Enhanced Growth Of Ncd Filmsmentioning

confidence: 99%

Precursors for CVD Growth of Nanocrystalline Diamond

2004

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“…2͑a͔͒. No CH 4 was introduced in the gas mixture in order to separate the effect of roughness and crystallite formation. However, if a dc bias voltage (Ϫ225 Vdc) is used during the etching, the roughness increases to 3 nm rms only and pits with a diameter of 100 nm appear on the surface with a density of 6 ϫ10 9 cm Ϫ2 ͓Fig.…”

Section: A Surface Roughness: Afm Investigationsmentioning

confidence: 99%

“…We recently proved that heating the silicon substrate in a CH 4 /H 2 plasma to 800°C is sufficient to grow SiC oriented with respect to the substrate and that the orientation of the SiC layer or SiC islands is independent of the use of a bias during the pretreatment. 14 While this previous paper focused on the influence of the nucleation parameters on the orientation of the SiC layer and the diamond nuclei at the beginning of the deposition process, the present paper deals with an enlarged interface study of CVD diamond on silicon.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3] Textured diamond films deposition 3 has been followed by the growth of diamond films which were partially oriented with respect to the substrate. 4 At present, diamond films are grown on silicon ͑100͒ with more than 80% of oriented crystallites relative to the silicon substrate. [5][6][7] However, a 5°to 10°tilt of the diamond crystallites relative to the silicon lattice is always observed.…”

Section: Introductionmentioning

confidence: 99%

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Local heteroepitaxy of diamond on silicon (100):mA study of the interface structure

et al. 1997

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An extensive study of the interface between highly oriented chemical vapor deposition diamond films and silicon has been performed using atomic force microscopy ͑AFM͒, high-resolution scanning electron microscopy ͑HRSEM͒, x-ray photoelectron diffraction ͑XPD͒, and transmission electron diffraction. The initial roughness of the silicon substrate has been investigated by AFM. Hydrogen plasma has been found to produce pits on the biased substrate surface. The local order of the ␤-SiC grown on silicon ͑100͒ during the biasenhanced nucleation step has been investigated by XPD through the C 1s and the Si 2p intensity modulations. Differences in the XPD diffraction features have been studied and found to be due to the element and energy dependence of the scattering effect. The preferential orientation of the diamond nuclei with respect to the silicon substrate has been quantified by comparison of HRSEM pictures and XPD patterns. Only 30-40 % of the crystallites have been found to be oriented relative to the substrate at an early growth stage of a highly oriented diamond film. The partial heteroepitaxy of the diamond nuclei has been confirmed by transmission electron microscopy through electron diffraction and bright-and dark-field images. Simulations of the XPD patterns induced by tilted and azimuthally rotated diamond crystallites have been performed in order to reproduce the smeared-out features of the experimental diffractograms. The short-range order of the diamond lattice at this early growth stage has been found. The amount of carbon on the silicon substrate has been measured by x-ray photoelectron spectroscopy and HRSEM. Comparing the results, we postulated the existence of carbon domains which are too small to be or become diamond nuclei and are etched away by the hydrogen plasma during the growth process.

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“…There has been past research to suggest that diamond heteroepitaxy may be achieved on other nondiamond or related substrates, and the recent deposition on ␤-SiC, Si, and Ni have shown the most dramatic results. [5][6][7][8][9][10][11] In the case of the work conducted on ␤-SiC and Si, bias-enhanced nucleation ͑BEN͒ was used for the formation of these epitaxial diamond crystals. 12 The term highly oriented diamond ͑HOD͒ has been used to describe the partial alignment of individual grains.…”

Section: Department Of Materials Science and Engineeringmentioning

confidence: 99%

Bias-enhanced nucleation of highly oriented diamond on titanium carbide (111) substrates

Wolter

McClure

Glass

et al. 1995

Applied Physics Letters

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The bias-enhanced nucleation (BEN) technique has been applied to TiC(111) substrates and resulted in deposition of oriented diamond particles. The orientation was observed via scanning electron microscopy. A dense region of oriented particles was not observed on the samples, presumably due to the excessive twinning of the diamond. However, micrographs taken throughout the substrate showed diamond particles having similar orientation with respect to each other. Some of the diamond particles showed evidence of azimuthal twist and tilting, resulting most likely from the ∼21% lattice mismatch. Raman spectra of the diamond crystals show a strong feature at 1332 cm−1, which is indicative of diamond, and smaller features at 1480 and 1602 cm−1 due to sp2-bonded carbon.

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Epitaxial diamond thin films on (001) silicon substrates

Cited by 308 publications

References 7 publications

Precursors for CVD Growth of Nanocrystalline Diamond

Precursors for CVD Growth of Nanocrystalline Diamond

Local heteroepitaxy of diamond on silicon (100):mA study of the interface structure

Bias-enhanced nucleation of highly oriented diamond on titanium carbide (111) substrates

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