Epitaxial Deposition of Silicon Layers by Pyrolysis of Silane

Abstract

The pyrolysis of silane diluted by a carrier gas in a horizontal-type system is described. Films of closely controlled thickness have been obtained. Control of the electrical resistivity of the films by admixture of suitable dopants is shown. The effect of various process parameters on growth rate is discussed. Experimental data on migration of dopant from the substrate to the grown layer are presented, and the mechanism involved is discussed. Some characteristics of devices using such layers are shown.

Nonequilibrium Atmospheric Plasma Deposition

“…Thermally assisted deposition at atmospheric pressure has been studied intensively during the 1970s and 1980s where there was an urgent need to deposit epi-silicon (Ref [1][2][3][4][5][6][7]. Many basic works (Ref [8][9][10][11][12][13] showed the importance of controlling the gas hydrodynamics whose complexity, especially in terms of instability (Ref 12,13), required strong numerical efforts to be accurately described by computational fluid dynamics.…”