Epitaxial behavior and interface structures of BSTO thin films

Abstract

Photocopying permitted by liceow only 0 2000 OPA (Over\ea\ Publisher< Association) N.V. Publishcd by licenrc under the Gordon and Breach Science Publishers imprint.Ferroelectric Ba(,.,)Sr,Ti03 (x = 0.5 and 0.25) thin films were grown on (001) LaAlOj.by using pulsed laser ablation. Extensive x-ray diffraction and selected area electron diffraction reveal that the as-grown films were (001) oriented with a good in-plane relationship of <IOO>BSTO // < 1 0 0 >~~0 .Rutherford Backscattering Spectroscopy ion-channeling studies suggested that the films had excellent epitaxial quality and crystallinity with an ion beam minimum yield xmin of only 2.6%. Atomically sharp interfaces were seen by cross-sectional high-resolution electron microscopy, indicated that the density of misfit dislocations was consistent with the lattice mismatch from the theoretical calculation.

Microstructure and Nano-mechanical Properties of Mn-doped (Ba,Sr)TiO3//Ba(Zr,Ti)O3Layered Films on MgO

“…Perovskite BaTiO 3 (BTO) based ferroelectric thin films have a high dielectric constant, relatively low dielectric loss and large electric field tunability [1][2][3][4][5][6]. These films have been considered as very important materials for high density dynamic random access memories and tunable microwave devices such as microwave tunable phase shifters, filters, oscillators, and antennas [1][2][3][4][5][6].…”

“…These films have been considered as very important materials for high density dynamic random access memories and tunable microwave devices such as microwave tunable phase shifters, filters, oscillators, and antennas [1][2][3][4][5][6]. These film materials have been intensively studied since the last century.…”