Epitaxial B-Graphene: Large-Scale Growth and Atomic Structure

Usachov, Dmitry Yu.; Fedorov, Alexander; Petukhov, Anatoly E.; Vilkov, O. Yu.; Рыбкин, А. Г.; Otrokov, M. M.; Arnau, A.; Chulkov, Evgueni V.; Yashina, Lada V.; Farjam, Mani; Adamchuk, V. K.; Senkovskiy, Boris V.; Laubschat, C.; Vyalikh, D. V.

doi:10.1021/acsnano.5b02322

Cited by 51 publications

(44 citation statements)

References 42 publications

(89 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The angular dependence in the C K-edge NEXAFS spectra in Fig. 3a is similar to that of the pristine graphene (shown in Supplementary Figure 13a and Supplementary Note VIII ), indicating that the crystalline quality is preserved after doping with dilute heteroatoms 42 , 43 . Moreover, the B and N K-edge NEXAFS spectra are similar to the C K-edge NEXAFS spectra showing the 1s → π * and 1s → σ * transitions (Supplementary Figures 13b–e and Supplementary Note VIII ).…”

Section: Resultssupporting

confidence: 57%

Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

et al. 2018

View full text Add to dashboard Cite

Lateral graphene p–n junctions are important since they constitute the core components in a variety of electronic/photonic systems. However, formation of lateral graphene p–n junctions with a controllable doping levels is still a great challenge due to the monolayer feature of graphene. Herein, by performing selective ion implantation and in situ growth by dynamic chemical vapor deposition, direct formation of seamless lateral graphene p–n junctions with spatial control and tunable doping is demonstrated. Uniform lattice substitution with heteroatoms is achieved in both the boron-doped and nitrogen-doped regions and photoelectrical assessment reveals that the seamless lateral p–n junctions exhibit a distinct photocurrent response under ambient conditions. As ion implantation is a standard technique in microelectronics, our study suggests a simple and effective strategy for mass production of graphene p–n junctions with batch capability and spatial controllability, which can be readily integrated into the production of graphene-based electronics and photonics.

show abstract

Section: Resultssupporting

confidence: 57%

Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Its band structure has been comprehensively investigated as a function of the metal substrate by ARPES. It has been found that some metals interact so strongly with graphene that they cause a drastic change in its band structure [ 32 , 35 , 36 , 37 ], while others are considered weakly interacting and graphene placed on them is considered quasi-freestanding [ 32 , 33 , 38 ]. To change the graphene/substrate interaction a methodology, called intercalation, has been developed to allow the exchange of the graphene support.…”

Section: Spatially Resolved Arpes For 2d Materialsmentioning

confidence: 99%

A Perspective on the Application of Spatially Resolved ARPES for 2D Materials

Cattelan

Fox

2018

Nanomaterials

View full text Add to dashboard Cite

In this paper, a perspective on the application of Spatially- and Angle-Resolved PhotoEmission Spectroscopy (ARPES) for the study of two-dimensional (2D) materials is presented. ARPES allows the direct measurement of the electronic band structure of materials generating extremely useful insights into their electronic properties. The possibility to apply this technique to 2D materials is of paramount importance because these ultrathin layers are considered fundamental for future electronic, photonic and spintronic devices. In this review an overview of the technical aspects of spatially localized ARPES is given along with a description of the most advanced setups for laboratory and synchrotron-based equipment. This technique is sensitive to the lateral dimensions of the sample. Therefore, a discussion on the preparation methods of 2D material is presented. Some of the most interesting results obtained by ARPES are reported in three sections including: graphene, transition metal dichalcogenides (TMDCs) and 2D heterostructures. Graphene has played a key role in ARPES studies because it inspired the use of this technique with other 2D materials. TMDCs are presented for their peculiar transport, optical and spin properties. Finally, the section featuring heterostructures highlights a future direction for research into 2D material structures.

show abstract

“…2D B-doped graphene produced by CVD has been widely investigated. [48,118,119] However, 3D B-doped graphene fabricated by CVD has been rarely reported. According to our understanding, only one report exists of a work wherein Xue et al obtained 3D B-doped graphene for the first time by template-assisted CVD in conjunction with B and N codoping (which will be discussed later in Section 2.2.1).…”

Section: Boron-doped 3d Graphenementioning

confidence: 99%

Synthesis of Doped Porous 3D Graphene Structures by Chemical Vapor Deposition and Its Applications

Ullah

Hasan

et al. 2019

Adv Funct Materials

View full text Add to dashboard Cite

Graphene doping principally commenced to compensate for its inert nature and create an appropriate bandgap. Doping of 3D graphene has emerged as a topic of interest because of attempts to combine its large available surface area-arising from its interconnected porous architecture-with superior catalytic, structural, chemical, and biocompatible characteristics that can be induced by doping. In light of the latest developments, this review provides an overview of the scalable chemical vapor deposition (CVD)-based growth of doped 3D graphene materials as well as their applications in various contexts, such as in devices used for energy generation and gas storage and biosensors. In particular, single-and multielement doping of 3D graphene by various dopants (such as nitrogen (N), boron (B), sulfur (S) and phosphorous (P)), the doping configurations of the resultant materials, an overview of recent developments in the field of CVD, and the influence of various parameters of CVD on graphene doping and 3D morphologies are focused in this paper. Finally, this report concludes the discussion by mentioning the existing challenges and future opportunities of these developing graphitic materials, intending to inspire the unveiling of more exciting functionalized 3D graphene morphologies and their potential properties, which can hopefully realize many possible applications.

show abstract

Epitaxial B-Graphene: Large-Scale Growth and Atomic Structure

Cited by 51 publications

References 42 publications

Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

A Perspective on the Application of Spatially Resolved ARPES for 2D Materials

Synthesis of Doped Porous 3D Graphene Structures by Chemical Vapor Deposition and Its Applications

Contact Info

Product

Resources

About