Graphene is a material with unique properties that can be exploited in electronics, catalysis, energy, and bio-related fields. Although, for maximal utilization of this material, high-quality graphene is required at both the growth process and after transfer of the graphene film to the application-compatible substrate. Chemical vapor deposition (CVD) is an important method for growing high-quality graphene on non-technological substrates (as, metal substrates, e.g., copper foil). Thus, there are also considerable efforts toward the efficient and non-damaging transfer of quality of graphene on to technologically relevant materials and systems. In this review article, a range of graphene current transfer techniques are reviewed from the standpoint of their impact on contamination control and structural integrity preservation of the as-produced graphene. In addition, their scalability, cost- and time-effectiveness are discussed. We summarize with a perspective on the transfer challenges, alternative options and future developments toward graphene technology.

Chemically doped graphene materials are fascinating because these have different desirable attributes with possible synergy. The inert and gapless nature of graphene can be changed by adding a small number of heteroatoms to substitute carbon in the lattice. The doped material may display superior catalytic activities; durable, fast, and selective sensing; improved magnetic moments; photoresponses; and activity in chemical reactions. In the current review, recent advances are covered in chemically doped graphene. First, the different types of heteroatoms, their bonding configurations, and briefly their properties are discussed. This is followed by the description of various synthesis and analytical methods essential for assessing the characteristics of heterographene with specific focus on the selected graphene materials of different dopants (particularly, single dopants, including N, B, S, P, first three halogens, Ge, and Ga, and codopants, such as N/O), and more importantly, up‐to‐date applications enabled by the intentional doping. Finally, outlook and perspectives section review the existing challenges, future opportunities, and possible ways to improve the graphitic materials. The goal is to update and inspire the readers to establish novel doped graphene with valuable properties and for current and futuristic applications.

Graphene doping principally commenced to compensate for its inert nature and create an appropriate bandgap. Doping of 3D graphene has emerged as a topic of interest because of attempts to combine its large available surface area-arising from its interconnected porous architecture-with superior catalytic, structural, chemical, and biocompatible characteristics that can be induced by doping. In light of the latest developments, this review provides an overview of the scalable chemical vapor deposition (CVD)-based growth of doped 3D graphene materials as well as their applications in various contexts, such as in devices used for energy generation and gas storage and biosensors. In particular, single-and multielement doping of 3D graphene by various dopants (such as nitrogen (N), boron (B), sulfur (S) and phosphorous (P)), the doping configurations of the resultant materials, an overview of recent developments in the field of CVD, and the influence of various parameters of CVD on graphene doping and 3D morphologies are focused in this paper. Finally, this report concludes the discussion by mentioning the existing challenges and future opportunities of these developing graphitic materials, intending to inspire the unveiling of more exciting functionalized 3D graphene morphologies and their potential properties, which can hopefully realize many possible applications.