EP120: A 0.35um, 3V/5V, Mixed-Signal/RF BiCMOS Technology

Abstract

Abstr actThis paper describes a 0.35um BiCMOS process, the key aspect of which is the range of applications served by the process. To service the varied requirements, the process is designed to support high yielding, high performance active devices, high precision, well-matched passive elements, plus a variety of options such as thick metal, high-Q inductors. The process is also compatible with an existing dualvoltage CMOS process.The paper describes some novel features such as the NPN collector design, process thermal sequence and presents results from all the devices and a PLL circuit.

Selection and Modeling of Integrated RF Varactors on a 0.35-<tex>$mu$</tex>m BiCMOS Technology

“…The integrated varactors described in this work were fabricated on a 0.35-m BiCMOS process, which was optimized for Manuscript RF applications [2]. A number of different varactor types can be fabricated on such a process, and this work will compare and contrast two of these varactor types, i.e., the isolated junction diode varactor and the MOS capacitor varactor.…”