Eosinophilic fasciitis

Krauser, R. E.

doi:10.1001/archderm.113.8.1092

Cited by 15 publications

(1 citation statement)

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“…The suitability of AlInAs layers in combination with GaInAs and InP and to a limited extent the use of A1GaInAs layers have been demonstrated by devices with high performance. Examples include: high electron mobility transistor [HEMT, (4)], metal semiconductor field effect transistor [MESFET, (5)], photodiode ( 6), (double) hetero bipolar transistor [(D)HBT, (7)], waveguide (8), and laser (9).…”

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Molecular Beam Epitaxy Grown Al ( Ga ) InAs : Schottky Contacts and Deep Levels

Schramm¹,

Bach

Künzel

et al. 1991

J. Electrochem. Soc.

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We have investigated methods of preparing high quality Schottky contacts on Al(Ga)InAs grown on InP substrates. A new kind of surface treatment (2 nm GaAs cap layer, phosphoric acid-based etching) before metal evaporation was developed. Barrier heights up to 0.73 eV and low leakage current densities of 0.22 FA/mm 2 (about one order of magnitude lower than without treatment) have been attained. The quality and stability of these contacts where mainly affected by a surface treatment, but only a slight dependence on doping and on the choice of metallization was observed. Si-doped AlInAs and AlxGa, Inl_x_yAs (x + y ~ 0.48) bulk material with different gallium contents are analyzed by deep level transient spectroscopy. Overlapping alloy broadened trap responses are separated by numerical spectrum analysis and reduction of the filling pulse width. We ascertained that the deep level concentration of Al=Ga,Inl_~ ,As is decreasing with increasing gallium content (by a factor of 2 from y = 0 to y = 0.12). This fact is associated with an improved crystalline quality of the quaternary A1GaInAs material, compared to ternary AlInAs, as demonstrated by narrow x-ray diffraction peaks and photoluminescence linewidths.

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