Environmental-Friendly Fluorine Mixture for CVD Cleaning Processes to Replace C2F6, CF4 and NF3

Wieland, Robert; Pittroff, Michael; Boudaden, Jamila; Altmannshofer, Stephan; Kutter, Christoph

doi:10.1149/07219.0023ecst

Cited by 7 publications

(5 citation statements)

References 6 publications

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“…To substitute NF3 in cleaning recipes, a solution with F2 whose GWP is null has been evaluated for deposition chambers [15]. Advantages of this molecule is their easy dissociation power into HF into atmosphere allowing a GWP equal to zero.…”

Section: F2 Evaluationmentioning

confidence: 99%

Life cycle assessment of etching processes for FDSOI transistors technologies

Renaud,

Sarrazin,

Lopes-Barbosa

et al. 2024

Advanced Etch Technology and Process Integration for Nanopatterning XIII

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The semiconductor industry is aware of its high resource consumption and overall impact on the environment and is working to minimize it. Especially, the use of perfluorocarbons (PFC) during the dry etching and deposit steps of device manufacturing is a major concern because of the extremely high global warming potential (GWP) and lifetime of most of those compounds. Consequently, plasma etching significantly contributes to CO2 emissions for sub-28 nm technologies on Scope 1 & 2 emissions. Currently, CEA-Leti is developing a 10 nm node on FDSOI (Fully Depleted Silicon On Insulator) technology. In this framework, we present Life Cycle Assessment (LCA) of etching processes for FDSOI transistor technologies. A comparison of impacts between the 28 nm node and 10 nm one is then conducted for FEOL and MEOL processes. Finally, based on these results, some eco-innovation proposals are discussed.

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Section: F2 Evaluationmentioning

confidence: 99%

Life cycle assessment of etching processes for FDSOI transistors technologies

Renaud,

Sarrazin,

Lopes-Barbosa

et al. 2024

Advanced Etch Technology and Process Integration for Nanopatterning XIII

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“…Studies have been conducted to replace NF 3 [16,17]. Among them, F 3 NO was considered a candidate gas to replace NF 3 [18].…”

Section: Introductionmentioning

confidence: 99%

Silicon Oxide Etching Process of NF3 and F3NO Plasmas with a Residual Gas Analyzer

et al. 2021

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The use of NF3 is significantly increasing every year. However, NF3 is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF3 is required. F3NO is considered a potential replacement to NF3. In this study, the characteristics and cleaning performance of the F3NO plasma to replace the greenhouse gas NF3 were examined. Etching of SiO2 thin films was performed, the DC offset of the plasma of both gases (i.e., NF3 and F3NO) was analyzed, and a residual gas analysis was performed. Based on the analysis results, the characteristics of the F3NO plasma were studied, and the SiO2 etch rates of the NF3 and F3NO plasmas were compared. The results show that the etch rates of the two gases have a difference of 95% on average, and therefore, the cleaning performance of the F3NO plasma was demonstrated, and the potential benefit of replacing NF3 with F3NO was confirmed.

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“…In addition, the measurement of radical species and density is applied to theoretical calculations to improve the accuracy of process calculation results. Moreover, energy and mass distribution measurements of ions and radicals are required for new gases, such as eco-friendly process gases [11][12][13]. To this end, we aim to contribute to the data generation for new gases using a diagnostic device.…”

Section: Introductionmentioning

confidence: 99%

Ion and Radical Characteristics (Mass/Energy Distribution) of a Capacitively Coupled Plasma Source Using Plasma Process Gases (CxFy)

Kim

et al. 2021

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We constructed a capacitively coupled plasma (CCP) source and installed various diagnostic tools to perform process diagnosis using a plasma process gas (CxFy). We obtained the energy and mass distributions of the ions and radicals from Ar, C4F8/Ar, and C4F6/Ar plasmas. The energy distribution of the ions incident on the substrate was controlled using the self-bias voltage, and the ion energy was found to be inversely proportional to the mass. The measured species and density of the ions and radicals can help understand plasma process results as they provide information about the ions and radicals incident on the substrate.

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Environmental-Friendly Fluorine Mixture for CVD Cleaning Processes to Replace C₂F₆, CF₄ and NF₃

Cited by 7 publications

References 6 publications

Life cycle assessment of etching processes for FDSOI transistors technologies

Life cycle assessment of etching processes for FDSOI transistors technologies

Silicon Oxide Etching Process of NF3 and F3NO Plasmas with a Residual Gas Analyzer

Ion and Radical Characteristics (Mass/Energy Distribution) of a Capacitively Coupled Plasma Source Using Plasma Process Gases (CxFy)

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