The prototypical chalcogenide perovskite BaZrS3, characterized
by its direct band gap, exceptionally strong light-harvesting ability,
and good carrier transport properties, provides fundamental prerequisites
for a promising photovoltaic material. This inspired the synthesis
of BaZrS3 in the form of thin films, using sputtering and
rapid thermal processing, aimed at device fabrication for future optoelectronic
applications. Using a combination of short- and long-range structural
information from X-ray absorption spectroscopy (XAS) and X-ray diffraction
(XRD), we have elucidated how, starting from a random network of Ba,
Zr, and S atoms, thermal treatment induces crystallization and growth
of BaZrS3 and explained its impact on the observed photoluminescence
(PL) properties. We also provide a description of the electronic structure
and substantiate the surface material chemistry using a combination
of depth-dependent photoelectron spectroscopy (PES) using hard X-ray
(HAXPES) and traditional Al K
α radiation.
From the knowledge of the optical band gap of BaZrS3 thin
films, synthesized at an optimal temperature of 900 °C, and our
estimation of the valence band edge position with respect to the Fermi
level, one may conclude that these semiconductor films are intrinsic
in nature with a slight n-type character. A detailed
understanding of the growth mechanism and electronic structure of
BaZrS3 thin films helps pave the way toward their utilization
in photovoltaic applications.