Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors

Moglestue, C.; Buot, F. A.; Anderson, W. T.

doi:10.1063/1.360153

Cited by 18 publications

(10 citation statements)

References 8 publications

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“…1 Schematic structure of the electronically simulated region of the HEMT. The doping is of n-type region using the net phonon emission approach [6], and then uses the distribution as an input into the HDE solver to determine the temperature distribution in this region. The HDE is solved using the analytical thermal resistance matrix method described in [7].…”

Section: Simulation Methodsmentioning

confidence: 99%

Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs

2006

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We present results from the simulation of the electrothermal behaviour of submicron wurtzite GaN/AlGaN High Electron Mobility Transistors (HEMTs). The simulator uses an iterative procedure which couples a Monte Carlo simulation with a fast Fourier series solution of the Heat Diffusion Equation (HDE). The results demonstrate the dependence of the extent of the thermal droop observed in the I ds -V ds characteristics and the device peak temperature on the device bias. The paper also investigates the effect of the inclusion of thermal self-consistency on the device microscopic properties and studies the dependence of the device electrothermal characteristics on the type of substrate material used.

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Section: Simulation Methodsmentioning

confidence: 99%

Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs

2006

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“…Monte-Carlo simulation method has been widely used to calculate the electron transport in semiconductor devices [11][12][13][14][15]. In this method, sets of random numbers are used to execute the simulation in order to determine the type of the scattering phenomena that can be expected in semiconductor materials etc.…”

Section: Monte-carlo Methodsmentioning

confidence: 99%

Monte-Carlo simulation for QDIP device design

Matsukura¹,

Uchiyama²,

Suzuki³

et al. 2005

Infrared Physics & Technology

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“…Prior to this work, the Monte Carlo method has been used by several authors to study heat generation in semiconductor devices (e.g. [12]) without the inclusion of electrothermal self-consistency. The first attempt to studying self-heating effects in FETs using an electrothermal Monte Carlo simulator was made by Yoder and Fichtner [13].…”

Section: Electrothermal Device Modelingmentioning

confidence: 99%

“…As the steady-state is approached, electronic parameters are sampled for another 20-30 ps to generate the results from this iteration, including the power density distribution. The average thermal power density (net phonon power emission density) distribution is determined in the simulated region of the device using the net phonon emission approach [12], in which the number of phonon emission and absorption events are counted over the iteration period. This distribution is then fed to the HDE solver to update the spatially-varying temperature distribution in the simulated region.…”

Section: The Electrothermal Monte Carlo Simulatormentioning

confidence: 99%

Monte Carlo study of self-heating in nanoscale devices

et al. 2012

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Progress in device miniaturization combined with the increase in integrated circuit packing density, as described by Moore's law, have been accompanied by an exponential increase in on-chip heat generation. In this context, there is an increasing demand for reliable electrothermal modeling techniques that accurately account for self-heating and allow a better understanding of thermal transport at the nanoscale. This paper presents a theoretical demonstration of the electrothermal phenomena in a variety of nanodevices, ranging from conventional Si-and III-V-based fieldeffect transistors (FETs) to nanowire devices. Simulation work relies on a very well-established Monte Carlo simulator considering self-heating using phonon statistics. The electrothermal simulator self-consistently couples a threedimensional (3D) electronic trajectory simulation with the solution of the heat diffusion equation. The Monte Carlo technique is very suitable for the simulation of electronic transport in nanoscale semiconductor devices, as it is free from low-field near-equilibrium approximations. In addition, the method is well-suited for electrothermal modeling, since it allows a detailed microscopic description of electron-phonon scattering which provides an inherent and direct prediction of the spatial distribution of heat generation. The paper is divided into three parts. The first T. Sadi ( ) part includes a description of the computational approach to simulate electrothermal transport in FETs. The advantages of using the simulation method are demonstrated by presenting full results from the simulation of an InGaAschannel high-electron mobility transistor (HEMT). The second part concerns electrothermal transport in conventional field-effect devices such as Si and III-V HEMTs. An investigation of self-heating effects in high-power devices, such as AlGaN/GaN HEMTs, and relevant Si-based FETs, e.g. Si/SiGe HEMTs, is presented. This part demonstrates how the analysis of self-heating effects may help us in understanding the electronic and thermal properties of nanoscale FETs. The third part of the paper consists of studying the electrothermal behavior of advanced structures. In this case, charge transport and self-heating effects are investigated in metal-insulator-semiconductor FETs (MISFETs) with a single InAs nanowire channel. Despite low heat dissipation, simulations predict significant local temperatures, due to the high current density levels and the poor thermal management in these nanowire structures.

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Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors

Cited by 18 publications

References 8 publications

Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs

Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs

Monte-Carlo simulation for QDIP device design

Monte Carlo study of self-heating in nanoscale devices

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