2015
DOI: 10.1016/j.mspro.2015.06.048
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Enhancing the Performance of MEMS Piezoresistive Pressure Sensor Using Germanium Nanowire

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Cited by 17 publications
(4 citation statements)
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“…The traditional processing methods of piezoresistive pressure sensor are mainly divided into surface micromachining and bulk micromachining [6][7][8][9][10]. The surface micro-machining method with etching sacrifice layer to form pressure-sensitive structure is complicated, and it is difficult to accurately control the size of sensitive diaphragm through wet etching sacrifice layer, which affects the performance of the designed sensor [11].…”
Section: Introductionmentioning
confidence: 99%
“…The traditional processing methods of piezoresistive pressure sensor are mainly divided into surface micromachining and bulk micromachining [6][7][8][9][10]. The surface micro-machining method with etching sacrifice layer to form pressure-sensitive structure is complicated, and it is difficult to accurately control the size of sensitive diaphragm through wet etching sacrifice layer, which affects the performance of the designed sensor [11].…”
Section: Introductionmentioning
confidence: 99%
“…Several materials have been selected and proposed to make diaphragmbased pressure sensors including polycrystalline silicon [10], Graphene [11], SOI substrate with Oxygen ion implantation [12] Germanium [13], Parylene [14], [15], Silicon nanowires [16] and each material and proposed structure has its own advantages and drawbacks.…”
Section: Introductionmentioning
confidence: 99%
“…Pressure sensors based upon different transduction techniques including piezoresistive (Mosser et al 1991;Aryafar et al 2015;Shaby et al 2015;Rajavelu et al 2014) (using the change in the resistance to detect strain in diaphragm-embedded strain gauges due to applied pressure), capacitive (Palasagaram and Ramadoss 2006;Rochus et al 2016; Molla-Alipour and Ganji 2015; Sundararajan and Hasan 2014;Lei et al 2012) (using the diaphragm deflection due to applied pressure/or pressure difference in the cavity to create a variable capacitor), resonance (Petersen et al 1991;Burns et al 1994;Burns et al 1995) (measuring the change in resonance frequency of edge clamped plate/bridge due to the applied pressure), piezoelectric (Eaton and Smith 1997;Koal 1985;) (measuring the influence of the pressure on the charge in certain materials, such as quartz, III-V compound semiconductors and others), optical (Wagner et al 1993;Dziuban et al 1992;Wagner et al 1994) (using Mach-Zehnder interferometry for measuring pressure induced deflection) and thermal (Haberli et al 1996) (measuring the heat transfer across an air gap between source and sink based upon applied pressure) have been developed. Among these, most of the pressure sensor designs incorporate a membrane or diaphragm (as depicted in Fig.…”
Section: Introductionmentioning
confidence: 99%