Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H₂ Plasma Treatment

Abstract

The visco-plastic model developed in part I of this work is used here to study the dislocation evolution in high pressure Czochralski growth of InP single crystals. Towards this an in-house computational fluid dynamics code MASTRAPP is linked to the ABAQUS software. MASTRAPP has the capability to predict the thermal field history in the Czochralski furnace throughout the growth period. The thermal loading history determined through MASTRAPP is fed to ABAQUS and the visco-plastic constitutive equations are integrated while maintaining force equilibrium in the growing crystal. The combined model predicts the final dislocation densities in the crystal at the end of the growth period. It is then used to study and predict the effect of various parameters and phenomena on the final dislocation densities-thermal shock, gas convection, height of boric oxide encapsulant layer, marginal roles of thermal radiation and melt convection, and the cool down period. Gas convection is found to have the most significant effect on the dislocation densities.

Effects of He (90%)/H2 (10%) plasma treatment on electric properties of low dielectric constant SiCOH films

“…It is thought that high contents of Si-O bond that has high thermochemical energy [10] in the low-k SiCOH films can contribute to decrease of leakage current pass. Furthermore, the H 2 plasma treatment can provide hydrogen radicals to passivate the surface and bulk of porous films and reduce the defect content [6], which can help reducing leakage current.…”

“…The effect of hydrogen treatment on the dielectric constant reducing was observed and explained in Refs. [6,7], where it was suggested that hydrogen plasma could enhance the thermal stability and increase the porosity of the films, resulting in lower k values. The He/H 2 plasma induced smaller amount of shrinkage on the film compared to oxygen, nitrogen, ammonia, etc.…”

“…On the other hand, depending on the various gases (e.g. ammonia, oxygen, nitrogen, hydrogen, helium, and mixture gases) and plasma conditions, plasma treatment could be used to improve electric and mechanical properties of the low-k SiCOH film [6,10]. It is needed to develop a post-deposition plasma treatment method, which can be easily In microelectronics industry, integration of the low dielectric constant (low-k) material films is a continuing issue due to the decreasing device feature size.…”

Application of the low dielectric methyl-silsesquiazane (MSZ) as a passivation layer on TFT-LCD

“…MSZ, whose dielectric constant is ∼ 2.6, is methyl-silsesquioxane (MSQ)-Thin Solid Films 515 (2006) 1117 -1120 www.elsevier.com/locate/tsf like structure derived from methyl-silsesquioxane. It has high transmittance in the range of visible light, good planarization properties and good electrical properties [8,9]. The thickness of MSZ could be controlled by tuning the speed of spin coater.…”

Electric field and temperature-induced removal of moisture in nanoporous organosilicate films

“…However, the dielectric properties of this nanoporous material are seriously degraded during photoresist removal-an important microelectronic fabrication step that involves O 2 ashing/etching. 6,7 This process also removes the hydrophobic CH x groups from exposed surfaces ͑pore surface as well͒ of the film and allowing the formation of silanol ͑Si-OH͒ groups. As a result, the hydrophillic Si-OH enhances physical adsorption of moisture upon air exposure and increases the dielectric constant.…”