Enhancing the Electrical Properties of Vertical OFETs Using a P(VDF-TrFE) Dielectric Layer

Aziz, Fakhra; Anuar, Afiq; Ahmad, Zubair; Roslan, Nur Adilah; Makinudin, Abdullah Haaziq Ahmad; Bawazeer, Tahani M.; Alsenany, Nourah; Alsoufi, Mohammad S.; Supangat, Azzuliani

doi:10.1007/s11664-019-07805-3

Cited by 5 publications

(3 citation statements)

References 48 publications

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“…Organic dielectrics and semiconductors are commonly either solution- or thermally processable, making them easy to modify and process for the fabrication of low-cost electronic devices. While the low cost, flexibility, and ease of processability are key benefits of organic electronic devices, they lack the same magnitude of charge carrier mobility exhibited by traditional inorganic devices, despite the frequent emphasis on the design and synthesis of various novel semiconducting polymers, − and manipulating the microstructure of the gate dielectric for this purpose. − Hole mobilities of the best solution-processed organic semiconductors used in OFETs are commonly on the order of just 1–10 cm 2 /V s , and are orders of magnitude smaller than the hole mobility of silicon at 480 cm 2 /V s . Silicon also exhibits an electron mobility several times higher than its hole mobility at 1350 cm 2 /V s, making it a preferred choice for traditional high-performance electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Polymeric Semiconductor in Field-Effect Transistors Utilizing Flexible and High-Surface Area Expanded Poly(tetrafluoroethylene) Membrane Gate Dielectrics

Bond,

Katz,

Frydrych

et al. 2024

ACS Appl. Mater. Interfaces

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Organic field-effect transistors (OFETs) were fabricated using three high-surface area and flexible expanded-poly(tetrafluoroethylene) (ePTFE) membranes in gate dielectrics, along with the semiconducting polymer poly[2,5-bis(2-octyldodecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-3,6-diyl)-alt-(2,2′:5′,2″:5″,2‴-quaterthiophen-5,5‴-diyl)] (PDPP4T). The transistor behavior of these devices was investigated following annealing at 50, 100, 150, and 200 °C, all sustained for 1 h. For annealing temperatures above 50 °C, the OFETs displayed improved transistor behavior and a significant increase in output current while maintaining similar magnitudes of V th shifts when subjected to static voltage compared to those kept at ambient temperature. We also tested the response to NO2 gas for further characterization and for possible applications. The ePTFE–PDPP4T interface of each membrane was characterized via scanning electron microscopy for all four annealing temperatures to derive a model for the hole mobility of the ePTFE–PDPP4T OFETs that accounts for the microporous structure of the ePTFE and consequently adjusts the channel width of the OFET. Using this model, a maximum hole mobility of 1.8 ± 1.0 cm2/V s was calculated for the polymer in an ePTFE–PDPP4T OFET annealed at 200 °C, whereas a PDPP4T OFET using only the native silicon wafer oxide as a gate dielectric exhibited a hole mobility of just 0.09 ± 0.03 cm2/V s at the same annealing condition. This work demonstrates that responsive semiconducting polymer films can be deposited on nominally nonwetting and extremely bendable membranes, and the charge carrier mobility can be significantly increased compared to their as-prepared state by using thermally durable polymer membranes with unique microstructures as gate dielectrics.

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Section: Introductionmentioning

confidence: 99%

Polymeric Semiconductor in Field-Effect Transistors Utilizing Flexible and High-Surface Area Expanded Poly(tetrafluoroethylene) Membrane Gate Dielectrics

Bond,

Katz,

Frydrych

et al. 2024

ACS Appl. Mater. Interfaces

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“…While in traditional planar devices, the conductive channel length is determined by the lithography process, in organic bipolar junction triodes designed with vertical structures, the conductive channel is determined only by the thickness of the semiconductor layer. The conductive channel can be easily reduced to a few tens of nanometres using a vertical structure [7], balancing the low mobility of organic semiconductors with the elimination of the complex lithography process. Because of their short channel length, VOBJTs can drive high current density, low power consumption, and highfrequency operation, making them ideal candidates for driving active-matrix OLED pixels [8].…”

Section: Introductionmentioning

confidence: 99%

Preparation and operating characteristics analysis of high-speed iron phthalocyanine organic phototriode

Feng¹,

Zhu²,

Ge³

et al. 2022

Semicond. Sci. Technol.

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The structure of Cu/FePc/Al/FePc/Cu vertical structure organic bipolar junction triode (VOBJT) is prepared by vacuum vapour deposition and magnetron sputtering process, using the photosensitive organic semiconductor material iron phthalocyanine (FePc) as the organic layer. The experiment results show that the device's output current is unsaturated, and the base voltage can effectively regulate the output current. FePc-VOBJT has good optoelectronic characteristics, and the optical response rate can reach R=0.19 A/W. Under the AC base voltage, the cut-off frequency of FePc-VOBJT is fc=10.7 kHz, and the turn-on and turn-off time can reach the microsecond level. When FePc-VOBJT responds to light pulse, the cut-off frequency fc(Light)=2 kHz, and the switch time can reach the millisecond level. Vertical structure dramatically reduces the device's conductive channel length and junction capacitance, which makes the organic semiconductor materials with poor electrical properties expected to be used in high-speed photoelectric sensors.

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“…To produce low-operating-voltage perovskite FETs based on polymer dielectrics, it is necessary to choose polymers with a high dielectric constant as gate dielectrics. The fluorinated polymer polyvinylidene fluoride (PVDF) and its derivatives have been extensively studied as gate dielectric materials in OFETs owing to their high thermal and chemical stability and large dielectric constants. − Polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) copolymers have attracted a great deal of attention because of their large dielectric constants and ferroelectric properties. ,, The large dielectric constant of PVDF-TrFE is caused by its high polarity from fluorine with high electronegativity . PVDF-TrFE has been widely integrated into various FETs, utilizing either the ferroelectric properties to realize nonvolatile memory function or the large capacitance to prepare low-operating-voltage transistors by inhibiting the ferroelectricity. ,, Currently, PVDF-TrFE has also been introduced into metal halide perovskite transistors.…”

mentioning

confidence: 99%

Low-Operating-Voltage Two-Dimensional Tin Perovskite Field-Effect Transistors with Multilayer Gate Dielectrics Based on a Fluorinated Copolymer

Liu

et al. 2023

J. Phys. Chem. Lett.

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The fabrication of organic–inorganic perovskite field-effect transistors (FETs) with polymer gate dielectrics is challenging because of the solvent corrosion and wettability issues at interfaces. A few polymers have been integrated into perovskite transistors; however, these devices have high operating voltages due to low dielectric constants. Herein, poly(vinylidenefluoride-co-trifluoroethylene) (PVDF-TrFE) with a high dielectric constant is introduced into bottom-gate phenylethylammonium tin iodide perovskite [(PEA)2SnI4] FETs. Polytetrafluoroethylene (PTFE) and cross-linked poly(4-vinylphenol) (PVP) (CL-PVP) are used to address the issues of solvent corrosion and wettability. We design the PVDF-TrFE/PTFE and PVDF-TrFE/PTFE/CL-PVP dielectric layers, where the ferroelectric properties of PVDF-TrFE are reduced by PTFE. The (PEA)2SnI4 FETs operate at relatively low gate voltages, exhibiting good overall performance with average hole mobilities of 0.42 and 0.36 cm2 V–1 s–1. Our findings provide a feasible strategy for constructing low-operating-voltage perovskite FETs with large-dielectric-constant ferroelectric polymers as gate dielectrics by a solution processing technique.

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Enhancing the Electrical Properties of Vertical OFETs Using a P(VDF-TrFE) Dielectric Layer

Cited by 5 publications

References 48 publications

Polymeric Semiconductor in Field-Effect Transistors Utilizing Flexible and High-Surface Area Expanded Poly(tetrafluoroethylene) Membrane Gate Dielectrics

Polymeric Semiconductor in Field-Effect Transistors Utilizing Flexible and High-Surface Area Expanded Poly(tetrafluoroethylene) Membrane Gate Dielectrics

Preparation and operating characteristics analysis of high-speed iron phthalocyanine organic phototriode

Low-Operating-Voltage Two-Dimensional Tin Perovskite Field-Effect Transistors with Multilayer Gate Dielectrics Based on a Fluorinated Copolymer

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