Enhancing the efficiency of Sb2S3 solar cells using dual-functional potassium doping

Ning, Huan; Guo, Huafei; Zhang, Jiayi; Wang, Xin; Jia, Xuguang; Qiu, Jianhua; Yuan, Ningyi; Ding, Jianning

doi:10.1016/j.solmat.2020.110816

Cited by 40 publications

(24 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As Sb 2 S 3 has a large bandgap of %1.73 eV, the relatively high V oc and low J sc can be observed in the reported work. [13] J sc is %15 mA cm À2 for the solar cells with %162 nm-thick Sb 2 S 3 absorber layer and 0.09 cm 2 effective area, as reported by Han et al [14] In the present work, the large J sc is related to the enhanced extraction performance of the nanostructured CdS buffer layer. To verify the result, external quantum efficiency (EQE) spectra was measured and is shown in Figure 7b.…”

Section: Resultssupporting

confidence: 83%

Nanostructured CdS Buffer Layer Fabricated with a Simple Spin‐Coating Method for Sb₂S₃ Solar Cells

Liu

Feng

Sun

et al. 2021

Physica Status Solidi (a)

View full text Add to dashboard Cite

Nanostructured CdS thin films are fabricated by a simple spin‐coating method at various annealing temperatures from 200 to 350 °C. CdS films of 80 nm thick, which are composed of nanoparticles or flakes with size ≈20–200 nm, are obtained. The nanostructured morphology is identified by scanning electron microscopy measurement. Sb2S3 films with large‐sized grains are deposited on the CdS thin films with hydrothermal method, in which CdS is adopted as electron transport layer (ETL) for Sb2S3 solar cells. The power conversion efficiency (PCE) is 4.88% for the best solar cell based on nanostructured CdS ETLs. Herein, a very facile and effective route to fabricate nanostructured CdS buffer layer for Sb2S3 solar cells is offered.

show abstract

Section: Resultssupporting

confidence: 83%

Nanostructured CdS Buffer Layer Fabricated with a Simple Spin‐Coating Method for Sb₂S₃ Solar Cells

Liu

Feng

Sun

et al. 2021

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…There are four important doping positions, namely at the surface, at the grain boundary, in the lattice by replacing host atoms, and interstitial. The doping effects in Sb 2 S 3 absorbers for thin films [48,50,91,96,97] and solar cells [25,49,71,[98][99][100][101][102][103] are discussed below.…”

Section: Doping Strategiesmentioning

confidence: 99%

Section: Ti Zn and Bi Dopingmentioning

confidence: 99%

Doping Strategies in Sb₂S₃ Thin Films for Solar Cells

Myagmarsereejid

Ingram

Batmunkh

et al. 2021

Small

View full text Add to dashboard Cite

Sb2S3 is an attractive solar absorber material that has garnered tremendous interest because of its fascinating properties for solar cells including suitable band gap, high absorption coefficient, earth abundance, and excellent stability. Over the past several years, intensive efforts have been made to enhance the photovoltaic efficiencies of Sb2S3 solar cells using many promising approaches including interfacial engineering, surface passivation, additive engineering, and band‐gap engineering of the charge transport layers and active light absorbing Sb2S3 materials. Recently, doping strategies in Sb2S3 light absorbers have gained attention as they promise to play important roles in controlling band gap, regulating film morphology, and passivating grain boundaries, and thus resulting in enhanced carrier transport, which is one of the most challenging issues in this cutting‐edge research field. In this review, after a brief introduction to Sb2S3, an overview of Sb2S3 solar cells and their fundamental properties are provided. Recent advances in doping strategies in Sb2S3 thin films and solar cells are then discussed to provide in‐depth understanding of the effects of various dopants on the photovoltaic properties of Sb2S3 materials. In conclusion, the personal perspectives and outlook to the future development of Sb2S3 solar cells are provided.

show abstract

“…For example, it has a suitable bandgap of 1.4−1.8 eV. [ 37,38 ] Moreover, Sb 2 S 3 has a good conductivity, [ 39 ] a good hydrophobicity, and a good chemical stability in air, [ 40 ] which can prevent oxygen and moisture from infiltrating into the beneath perovskite layer. In addition, the valence band (VB) energy levels of Sb 2 S 3 matches well with that of the perovskite for the efficient extraction of photogenerated holes from the perovskite layer.…”

Section: Introductionmentioning

confidence: 99%

Spiro‐OMeTAD:Sb₂S₃ Hole Transport Layer with Triple Functions of Overcoming Lithium Salt Aggregation, Long‐Term High Conductivity, and Defect Passivation for Perovskite Solar Cells

Shen

Chen

et al. 2021

Solar RRL

View full text Add to dashboard Cite

The development of a hole transport layer (HTL) with persistent high conductivity, good moisture/oxygen barrier ability, and suitable passivation ability of perovskite defects is very important for achieving high power conversion efficiency (PCE) and long‐term stability of perovskite solar cells (PSCs). However, the state‐of‐the art HTL, lithium bis(trifluoromethanesulfonyl)‐imide (Li‐TFSI)‐doped 2,2′,7,7′‐tetrakis‐(N,N‐di‐p‐methoxyphenylamine)‐9,9′‐spirobifluorene (spiro‐OMeTAD), does not have these abilities. Herein, the incorporation of antimony sulfide (Sb2S3) nanoparticles as a multifunctional additive into spiro‐OMeTAD is demonstrated. The Sb2S3 effectively improve the compactness of composite spiro‐OMeTAD:Sb2S3 HTL by inhibiting the Li‐TFSI aggregation and effectively prevent the infiltration of moisture and oxygen into the perovskite layer, resulting in its high chemical stability. More importantly, Sb2S3 not only improves the conductivity and hole mobility of the spiro‐OMeTAD:Sb2S3 through the oxidation of spiro‐OMeTAD by Sb2S3, but also makes the high conductivity more durable and stable in the atmospheric environment. In addition, Sb2S3 also effectively passivates the perovskite defects and accelerates the charge transfer from perovskite layer to HTL. As a consequence, the optimized PSCs based on spiro‐OMeTAD:Sb2S3 HTL exhibit a much higher PCE (22.13%) than that (19.29%) of the PSCs without Sb2S3 and show a greatly improved stability.

show abstract

Enhancing the efficiency of Sb2S3 solar cells using dual-functional potassium doping

Cited by 40 publications

References 44 publications

Nanostructured CdS Buffer Layer Fabricated with a Simple Spin‐Coating Method for Sb₂S₃ Solar Cells

Nanostructured CdS Buffer Layer Fabricated with a Simple Spin‐Coating Method for Sb₂S₃ Solar Cells

Doping Strategies in Sb₂S₃ Thin Films for Solar Cells

Spiro‐OMeTAD:Sb₂S₃ Hole Transport Layer with Triple Functions of Overcoming Lithium Salt Aggregation, Long‐Term High Conductivity, and Defect Passivation for Perovskite Solar Cells

Contact Info

Product

Resources

About

Enhancing the efficiency of Sb2S3 solar cells using dual-functional potassium doping

Cited by 40 publications

References 44 publications

Nanostructured CdS Buffer Layer Fabricated with a Simple Spin‐Coating Method for Sb2S3 Solar Cells

Nanostructured CdS Buffer Layer Fabricated with a Simple Spin‐Coating Method for Sb2S3 Solar Cells

Doping Strategies in Sb2S3 Thin Films for Solar Cells

Spiro‐OMeTAD:Sb2S3 Hole Transport Layer with Triple Functions of Overcoming Lithium Salt Aggregation, Long‐Term High Conductivity, and Defect Passivation for Perovskite Solar Cells

Contact Info

Product

Resources

About

Nanostructured CdS Buffer Layer Fabricated with a Simple Spin‐Coating Method for Sb₂S₃ Solar Cells

Nanostructured CdS Buffer Layer Fabricated with a Simple Spin‐Coating Method for Sb₂S₃ Solar Cells

Doping Strategies in Sb₂S₃ Thin Films for Solar Cells

Spiro‐OMeTAD:Sb₂S₃ Hole Transport Layer with Triple Functions of Overcoming Lithium Salt Aggregation, Long‐Term High Conductivity, and Defect Passivation for Perovskite Solar Cells