Nanostructured CdS Buffer Layer Fabricated with a Simple Spin‐Coating Method for Sb₂S₃ Solar Cells

Abstract

Nanostructured CdS thin films are fabricated by a simple spin‐coating method at various annealing temperatures from 200 to 350 °C. CdS films of 80 nm thick, which are composed of nanoparticles or flakes with size ≈20–200 nm, are obtained. The nanostructured morphology is identified by scanning electron microscopy measurement. Sb2S3 films with large‐sized grains are deposited on the CdS thin films with hydrothermal method, in which CdS is adopted as electron transport layer (ETL) for Sb2S3 solar cells. The power conversion efficiency (PCE) is 4.88% for the best solar cell based on nanostructured CdS ETLs. Herein, a very facile and effective route to fabricate nanostructured CdS buffer layer for Sb2S3 solar cells is offered.

Theoretical Analysis and Development of Multilayered Ecofriendly Sb2S3‐Based Solar Cell Using SCAPS‐1D Framework

“…For TiO 2 and CdS, we get an efficiency of 9.7% and 5.69% correspondingly, which are in great accord with the experimental data available in the literature. [ 12,22 ]…”

“…For TiO 2 and CdS, we get an efficiency of 9.7% and 5.69% correspondingly, which are in great accord with the experimental data available in the literature. [12,22] The CBO and VBO values at buffers/Sb 2 S 3 junction are calculated using the following Equation (1 and 2) [1,2] and shown in Table 6 CBO ¼ X ðAbsorberÞ À X ðbufferÞ…”

“…[9] Recently, a PCE of 10% was obtained by Chen's group employing antimony selenosulfide Sb 2 (S, Se) 3 as a photon-absorbing active material. [10] To this end, several deposition techniques have been maintained to fabricate Sb 2 (S,Se) 3 thin-layer SCs with high quality and performance, such as epitaxial growth mechanism, [11] hydrothermal deposition, [10,12] spin coating [12] …etc.…”