Enhancing silicon cutting performance by shaping the focused beam

Migliore, Leonard

doi:10.1117/12.708642

Cited by 6 publications

(4 citation statements)

References 6 publications

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“…For example, in previous work (Ref. 15), a process comprised of 12 overlapping scans at 2.0 m/s scan speed was implemented to achieve a net cutting speed of 167 mm/s for 100-µm thick silicon. While that result already represented a 2X improvement compared to a roundbeam process 18 , we have shown that, with the primary difference of larger ellipticity -and with a somewhat shorter laser pulse duration -a single scan at 350-mm/s can readily cut through the same thickness of silicon.…”

Section: Discussionmentioning

confidence: 99%

“…The 3-dimensional imagery shows a fairly smooth, even surface texturing that is lacking the larger-scale periodic structures that are exhibited by a higher speed/lower overlap process and/or with a round vs. elliptical beam spot (see, for example, Ref. 15). Also shown in the figure are RMS and Ra roughness measurement data for the ~140-µm x 90-µm region bounded by the red-dashed rectangular line in the 3D image.…”

Section: Surface Finish Qualitymentioning

confidence: 96%

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Highest-speed dicing of thin silicon wafers with nanosecond-pulse 355nm q-switched laser source using line-focus fluence optimization technique

Bovatsek

Patel

2010

SPIE Proceedings

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Due to current and future anticipated widespread use of thin silicon wafers in the microelectronics industry, there is a large and growing interest in laser-based wafer dicing solutions. As the wafers become thinner, the laser advantage over saw dicing increases in terms of both the speed and yield of the process. Furthermore, managing the laser heat input during the dicing process becomes more important with increasingly thin wafers and with increasingly narrow saw streets. In this work, shaped-beam laser-cutting of thin (100 µm and below) silicon is explored with Newport / SpectraPhysics® Pulseo® 20-W nanosecond-pulse 355-nm DPSS q-switched laser system. Optimal process conditions for cutting various depths in silicon are determined, with particular emphasis on fluence optimization for a narrow-kerf cutting process. By shaping the laser beam into a line focus, the optimal fluence for machining the silicon can be achieved while at the same time utilizing the full output power of the laser source. In addition, by adjusting the length of the laser line focus, the absolute fastest speed for various cutting depths is realized. Compared to a circular beam, a dramatic improvement in process efficiency is observed.

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Section: Discussionmentioning

confidence: 99%

Section: Surface Finish Qualitymentioning

confidence: 96%

Highest-speed dicing of thin silicon wafers with nanosecond-pulse 355nm q-switched laser source using line-focus fluence optimization technique

Bovatsek

Patel

2010

SPIE Proceedings

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“…Among the innovative methods employed in silicon processing, laser technology stands out as a powerful tool offering precision, speed, and versatility [16]. Laser-based silicon processing has revolutionized various aspects of semiconductor fabrication, enabling precise material modification [17][18][19], structuring [20][21][22][23][24][25], surface functionalization [26], and characterization at the micro-and nanoscale levels [27]. From doping and annealing to etching and ablation [20,28] or stealth dicing [29][30][31], lasers provide a versatile means to tailor silicon properties and structures with unprecedented control and efficiency.…”

Section: Introductionmentioning

confidence: 99%

Femtosecond Laser Percussion Drilling of Silicon Using Repetitive Single Pulse, MHz-, and GHz-Burst Regimes

Balage,

Lafargue,

Guilberteau

et al. 2024

Micromachines

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In this contribution, we present novel results on top-down drilling in silicon, the most important semiconductor material, focusing specifically on the influence of the laser parameters. We compare the holes obtained with repetitive single pulses, as well as in different MHz- and GHz-burst regimes. The deepest holes were obtained in GHz-burst mode, where we achieved holes of almost 1 mm depth and 35 µm diameter, which corresponds to an aspect ratio of 27, which is higher than the ones reported so far in the literature, to the best of our knowledge. In addition, we study the influence of the energy repartition within the burst in GHz-burst mode.

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“…In some cases, however, the Gaussian intensity profile is not ideal for an intended task or process, and therefore it is necessary to reshape the spatial intensity distribution of the beam. For instance, flat top beams are more suitable for laser polishing, 1 donut-shaped beams with sharply defined edges are more efficient for laser drilling, 2 whilst elliptically shaped beams are known to be more beneficial for cutting, 3 dicing, 4 and also melting applications. 5 Creating an elliptically shaped beam along the scan direction can increase the cutting speed, improve the ablation efficiency, modify the laser-induced thermal gradient and stresses in the workpiece, and enhance the surface quality of laser-molten structures.…”

Section: Introductionmentioning

confidence: 99%

Scalable stacked array piezoelectric deformable mirror for astronomy and laser processing applications

Wlodarczyk

Bryce

Schwartz

et al. 2014

Review of Scientific Instruments

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A prototype of a scalable and potentially low-cost stacked array piezoelectric deformable mirror (SA-PDM) with 35 active elements is presented in this paper. This prototype is characterized by a 2 μm maximum actuator stroke, a 1.4 μm mirror sag (measured for a 14 mm × 14 mm area of the unpowered SA-PDM), and a ±200 nm hysteresis error. The initial proof of concept experiments described here show that this mirror can be successfully used for shaping a high power laser beam in order to improve laser machining performance. Various beam shapes have been obtained with the SA-PDM and examples of laser machining with the shaped beams are presented.

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Enhancing silicon cutting performance by shaping the focused beam

Cited by 6 publications

References 6 publications

Highest-speed dicing of thin silicon wafers with nanosecond-pulse 355nm q-switched laser source using line-focus fluence optimization technique

Highest-speed dicing of thin silicon wafers with nanosecond-pulse 355nm q-switched laser source using line-focus fluence optimization technique

Femtosecond Laser Percussion Drilling of Silicon Using Repetitive Single Pulse, MHz-, and GHz-Burst Regimes

Scalable stacked array piezoelectric deformable mirror for astronomy and laser processing applications

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