Enhancing RF Bulk Acoustic Wave Devices: Multiphysical Modeling and Performance

Chauhan, Vikrant; Huck, Christian; Frank, A.; Akstaller, Wolfgang; Weigel, Robert; Hagelauer, Amelie

doi:10.1109/mmm.2019.2928677

Cited by 15 publications

(9 citation statements)

References 29 publications

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“…One proposed path for 5G RF acoustic devices is to scale down the critical dimensions directly (e.g., film thickness and electrode feature size) of the conventional RF acoustic platforms, such as surface acoustic wave (SAW) [6]- [8], and film bulk acoustic resonators (FBAR) [9]- [11], to operate at the sub-6 GHz bands. However, three significant challenges prohibit such an approach to meet the 5G NR requirements.…”

Section: Introductionmentioning

confidence: 99%

Enabling Higher Order Lamb Wave Acoustic Devices With Complementarily Oriented Piezoelectric Thin Films

Yang

Link

et al. 2020

J. Microelectromech. Syst.

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In this work, we present a new paradigm for enabling gigahertz higher-order Lamb wave acoustic devices using complementarily oriented piezoelectric (COP) thin films. Acoustic characteristics are first theoretically explored with COP lithium niobate (LiNbO 3) thin films, showing their excellent frequency scalability, low loss, and high electromechanical coupling (k 2). Acoustic resonators and delay lines are then designed and implemented, targeting efficient excitation of higher-order Lamb waves with record-breaking low loss. The fabricated resonator shows a 2 nd-order symmetric (S2) resonance at 3.05 GHz with a high quality factor (Q) of 657, and a large k 2 of 21.5% and a 6 th-order symmetric (S6) resonance at 9.05 GHz with a high Q of 636 and a k 2 of 3.71%, both among the highest demonstrated for higher-order Lamb wave devices. The delay lines show an average insertion loss (IL) of 7.5 dB and the lowest reported propagation loss of 0.014 dB/µm at 4.4 GHz for S2. Notable acoustic passbands up to 15.1 GHz are identified. Upon further optimizations, the proposed COP platform can lead to gigahertz low-loss wideband acoustic components.

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Section: Introductionmentioning

confidence: 99%

Enabling Higher Order Lamb Wave Acoustic Devices With Complementarily Oriented Piezoelectric Thin Films

Yang

Link

et al. 2020

J. Microelectromech. Syst.

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“…The "G-S-G" signal ports on the left and right sides of the filter indicate the input and output of the RF signal. Combining the simulation results of the Mason model with those of the electromagnetic model enables the realization of acoustic-electromagnetic co-simulation [6,32,33].…”

Section: Design and Fabricationmentioning

confidence: 99%

“…The evolution of wireless communication continuously drives filters toward highfrequency and high-power applications [1][2][3][4]. Benefiting from the characteristics of high frequency, high quality, and small size, film bulk acoustic-wave resonator (FBAR) filters have captured more and more attention in the radio frequency (RF) filter market [5,6]. Aluminum nitride (AlN) has been commonly employed in the design and fabrication of FBAR due to its high longitudinal sound velocity (11,354 m/s) and low material loss [7].…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of a Film Bulk Acoustic Wave Filter for 3.0 GHz–3.2 GHz S-Band

Gao,

Zheng,

et al. 2024

Sensors

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Film bulk acoustic-wave resonators (FBARs) are widely utilized in the field of radio frequency (RF) filters due to their excellent performance, such as high operation frequency and high quality. In this paper, we present the design, fabrication, and characterization of an FBAR filter for the 3.0 GHz–3.2 GHz S-band. Using a scandium-doped aluminum nitride (Sc0.2Al0.8N) film, the filter is designed through a combined acoustic–electromagnetic simulation method, and the FBAR and filter are fabricated using an eight-step lithographic process. The measured FBAR presents an effective electromechanical coupling coefficient (keff2) value up to 13.3%, and the measured filter demonstrates a −3 dB bandwidth of 115 MHz (from 3.013 GHz to 3.128 GHz), a low insertion loss of −2.4 dB, and good out-of-band rejection of −30 dB. The measured 1 dB compression point of the fabricated filter is 30.5 dBm, and the first series resonator burns out first as the input power increases. This work paves the way for research on high-power RF filters in mobile communication.

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“…Recently, mobile communication systems have continued to demand a high data rate and great mobility [1][2][3] . These trends are increasing the need for filters with higher frequencies and wider bandwidths 4 .…”

Section: Introductionmentioning

confidence: 99%

Aluminum scandium nitride thin-film bulk acoustic resonators for 5G wideband applications

et al. 2022

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Bulk acoustic wave (BAW) filters have been extensively used in consumer products for mobile communication systems due to their high performance and standard complementary metal-oxide-semiconductor (CMOS) compatible integration process. However, it is challenging for a traditional aluminum nitride (AlN)-based BAW filter to meet several allocated 5G bands with more than a 5% fractional bandwidth via an acoustic-only approach. In this work, we propose an Al0.8Sc0.2N-based film bulk acoustic wave resonator (FBAR) for the design of radio frequency (RF) filters. By taking advantage of a high-quality Al0.8Sc0.2N thin film, the fabricated resonators demonstrate a large Keff2 of 14.5% and an excellent figure of merit (FOM) up to 62. The temperature coefficient of frequency (TCF) of the proposed resonator is measured to be −19.2 ppm/°C, indicating excellent temperature stability. The fabricated filter has a center frequency of 4.24 GHz, a −3 dB bandwidth of 215 MHz, a small insertion loss (IL) of 1.881 dB, and a rejection >32 dB. This work paves the way for the realization of wideband acoustic filters operating in the 5G band.

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Enhancing RF Bulk Acoustic Wave Devices: Multiphysical Modeling and Performance

Cited by 15 publications

References 29 publications

Enabling Higher Order Lamb Wave Acoustic Devices With Complementarily Oriented Piezoelectric Thin Films

Enabling Higher Order Lamb Wave Acoustic Devices With Complementarily Oriented Piezoelectric Thin Films

Design and Fabrication of a Film Bulk Acoustic Wave Filter for 3.0 GHz–3.2 GHz S-Band

Aluminum scandium nitride thin-film bulk acoustic resonators for 5G wideband applications

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