Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers

Wang, Wenjie; Liao, Mingle; Yuan, Jun; Luo, Siyuan; Huang, Fenglan

doi:10.1088/1674-1056/ac597c

Cited by 5 publications

(2 citation statements)

References 28 publications

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“…The highest current value is obtained when the thickness of the GaN substrate is 0.1m and the lowest value is obtained when the thickness is 0.5m, as shown in Figure 4 (inset). The effects of increase of layer thickness at p-region were gradual increase the efficiency [23]. In reference to the curves of p-region of GaN/p-Si solar cell, the efficiency shows a decline in efficiency as the thickness increases from 30μm to 150μm.…”

Section: N-region Thicknessmentioning

confidence: 94%

Untitled

2023

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In this study, we used the PC1D simulator to demonstrate the performance analysis of a solar cell model based on gallium nitride (GaN). It has been discovered that when the layer thickness of the GaN substrate grows, the efficiency of solar cells decreases. This was found by comparing the doping concentration and layer thickness on the GaN and silicon substrates. As the thickness of the p-doping Si layer rises, cell efficiency increases just modestly. The optimal doping concentrations for GaN and p-silicon are 1x10 18 cm -3 and 1x10 17 cm -3 , respectively. In compared to other designs, GaN/p-silicon solar cells have the highest efficiency of 25.26%.

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Section: N-region Thicknessmentioning

confidence: 94%

Untitled

2023

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“…The ratio of conduction band offset △Ec to the valence band offset △Ev of InGaN/InGaN quantum well is assumed to be 0.7/0.3. The setting of some other parameters, including absorption coefficient and refractive index of ternary alloy, is referred to our previous work [10]. Note that the change in growth conditions results in a wide band gap bending parameter spectrum for ternary nitride alloys.…”

Section: Designmentioning

confidence: 99%

Effects of AlInGaN electron barrier layer with different aluminum components on the photoelectric properties of GaN-based laser

Wang,

Liao,

Luo

et al. 2024

Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023)

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The effects of AlInGaN electron barrier layer (EBL) on the photoelectric properties of gallium nitride laser with reduced polarization of different aluminum components is numerically simulated by crosslight software. Compared with the Al0.322In0.08Ga0.598N EBL, the Al0.447In0.174Ga0.379N EBL with higher Al component improves the photoelectric performance of laser, achieving lower threshold current and higher output power. The reason is that the use of Al0.447In0.174Ga0.379N electron barrier material with higher Al component further reduces the polarization effect, thus improving the hole injection efficiency and reducing the electron leakage. Simulation results reveal that the threshold current decreases from 25.3mA to 22.6mA, and the output power increases from 98.3mW to 155.9mW. At the same time, the optical field distribution of higher Al component EBL structure laser is more concentrated in the active region, which further reduces the absorption loss, so that the optical confinement factor increases from 1.14% to 1.2%, and the slope efficiency also increases from 0.77W/A to 1.18W/A.

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The effects of thickness and doping concentration on the solar efficiency of GaN/p-Si based solar cells

Khairuddin,

Mohd Yusoff,

Hussin

2023

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In this study, we used the PC1D simulator to demonstrate the performance analysis of a solar cell model based on gallium nitride (GaN). It has been discovered that when the layer thickness of the GaN substrate grows, the efficiency of solar cells decreases. This was found by comparing the doping concentration and layer thickness on the GaN and silicon substrates. As the thickness of the p-doping Si layer rises, cell efficiency increases just modestly. The optimal doping concentrations for GaN and p-silicon are 1x1018 cm-3 and 1x1017 cm-3 , respectively. In compared to other designs, GaN/p-silicon solar cells have the highest efficiency of 25.26%.

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Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers

Cited by 5 publications

References 28 publications

Untitled

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Effects of AlInGaN electron barrier layer with different aluminum components on the photoelectric properties of GaN-based laser

The effects of thickness and doping concentration on the solar efficiency of GaN/p-Si based solar cells

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