Enhancing p-channel InGaSb QW-FETs via Process-Induced Compressive Uniaxial Strain

Guo, Luke; Xia, Ling; Bennett, B. R.; Boos, J.B.; Ancona, Mario G.; Alamo, J.A. del

doi:10.1109/led.2014.2357429

Cited by 12 publications

(3 citation statements)

References 17 publications

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“…Thus, the motivation of further investigation and development of III-V p-type transistors still remains. Earlier studies based on (In)GaSb MOSFETs with various device structures [5,[14][15][16][17] have shown the challenge to retain the offstate performance when scaling from a long channel device to a short channel device (L g <500 nm). Thus, the trade-off between on-and off-state performance during gate length scaling therefore needs to be solved.…”

Section: Introductionmentioning

confidence: 99%

Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing

et al. 2021

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GaSb is considered as an attractive p-type channel material for future III-V metal-oxide-semiconductor (MOS) technologies, but the processing conditions to utilize the full device potential such as low power logic applications and RF applications still need attention. In this work, applying rapid thermal annealing (RTA) to nanoscale GaSb vertical nanowire p-type MOS field-effect transistors, we have improved the average peak transconductance (g m,peak) by 50% among 28 devices and achieved 70 μS μm−1 at V DS = −0.5 V in a device with 200 nm gate length. In addition, a low subthreshold swing down to 144 mV dec−1 as well as an off-current below 5 nA μm−1 which refers to the off-current specification in low-operation-power condition has been obtained. Based on the statistical analysis, the results show a great enhancement in both on- and off-state performance with respect to previous work mainly due to the improved electrostatics and contacts after RTA, leading to a potential in low-power logic applications. We have also examined a short channel device with L g = 80 nm in RTA, which shows an increased g m,peak up to 149 μS μm−1 at V DS = −0.5 V as well as a low on-resistance of 4.7 kΩ·μm. The potential of further enhancement in g m via RTA offers a good alternative to obtain high-performance devices for RF applications which have less stringent requirement for off-state performance. Our results indicate that post-fabrication annealing provides a great option to improve the performance of GaSb-based p-type devices with different structures for various applications.

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Section: Introductionmentioning

confidence: 99%

Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing

et al. 2021

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“…19,20 These antimonide quantum wells have been used in Schottkybarrier p-FETs with good direct-current (DC) and microwave performance. 16,[21][22][23][24][25] In addition, (In) GaSb-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated and have the attractive advantage of much lower gate leakage current, which is necessary for lowpower logic circuits. [26][27][28] Implementation of III-V CMOS technology on large-scale Si wafers is a key requirement, and significant progress has been made in this area for both InGaAs n-channel and SiGe/Ge p-channel materials.…”

Section: Introductionmentioning

confidence: 99%

Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors

Bennett

Podpirka

Boos

et al. 2016

Journal of Elec Materi

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Quantum wells of InGaSb clad by AlGa(As)Sb were grown by molecular beam epitaxy. Well and barrier compositions were chosen to yield biaxial compressive strain and enhanced hole mobility in the InGaSb. Wells with thickness of 7.5 nm exhibited room-temperature mobilities of 1000 cm 2 /V s to 1100 cm 2 / V s, with the surface-layer material influencing two-dimensional hole densities. The introduction of As into the barrier material allows a wider range of p-channel well/barrier combinations and lattice constants. These could be compatible with n-channel InGaAs wells for complementary field-effect transistor circuits which utilize a common buffer layer. InGaSb wells with thicknesses of 20 nm to 30 nm and compressive strains of 1.0% to 1.5% exhibited hole mobilities of 700 cm 2 /V s to 900 cm 2 /V s.

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“…Significant progress has been made towards antimonide-based p-channel MOSFETs [3]- [5], including the demonstration of high-k dielectrics [6] as well as the incorporation of biaxial [7]- [9] and uniaxial strain [10], which has been shown to greatly enhance transport characteristics [11]. However, one of the challenges hampering the development of high-performance III-V p-channel MOSFETs is the lack of a low-resistance ohmic contact technology.…”

Section: Introductionmentioning

confidence: 99%

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

Guo

Bennett

et al. 2015

IEEE Electron Device Lett.

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Enhancing p-channel InGaSb QW-FETs via Process-Induced Compressive Uniaxial Strain

Cited by 12 publications

References 17 publications

Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing

Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing

Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

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