Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography
Abstract:In this study, the multiple-exposure nanosphere-lens lithography method utilizing the polystyrene nanospheres with focusing behavior is investigated and introduced to fabricate diverse photonic crystals (PCs) on indium tin oxide to enhance the optical output power of GaN-based light-emitting diode (LED). Simulated results indicate that the focused light intensity decreases with increasing tilted angle due to the shadow effect introduced by adjacent nanospheres. The fill factor of nanopattern is tunable by cont… Show more
“…In addition, the size of microspheres are available in a wide range from ∼10 nm to several 100 μm diameter with a standard deviation of less than 2%. These properties make microsphere lenses valuable as they are compatible with a variety of optoelectronic applications [6][7][8][9][10].…”
In this Letter, we present a single-exposure deep-UV projection lithography at 254-nm wavelength that produces nanopatterns in a scalable area with a feature size of 80 nm. In this method, a macroscopic lens projects a pixelated optical mask on a monolayer of hexagonally arranged microspheres that reside on the Fourier plane and image the mask's pattern into a photoresist film. Our macroscopic lens shrinks the size of the mask by providing an imaging magnification of ∼1.86×10(4), while enhancing the exposure power. On the other hand, microsphere lens produces a sub-diffraction limit focal point-a so-called photonic nanojet-based on the near-surface focusing effect, which ensures an excellent patterning accuracy against the presence of surface roughness. Ray-optics simulation is utilized to design the bulk optics part of the lithography system, while a wave-optics simulation is implemented to simulate the optical properties of the exposed regions beneath the microspheres. We characterize the lithography performance in terms of the proximity effect, lens aberration, and interference effect due to refractive index mismatch between photoresist and substrate.
“…In addition, the size of microspheres are available in a wide range from ∼10 nm to several 100 μm diameter with a standard deviation of less than 2%. These properties make microsphere lenses valuable as they are compatible with a variety of optoelectronic applications [6][7][8][9][10].…”
In this Letter, we present a single-exposure deep-UV projection lithography at 254-nm wavelength that produces nanopatterns in a scalable area with a feature size of 80 nm. In this method, a macroscopic lens projects a pixelated optical mask on a monolayer of hexagonally arranged microspheres that reside on the Fourier plane and image the mask's pattern into a photoresist film. Our macroscopic lens shrinks the size of the mask by providing an imaging magnification of ∼1.86×10(4), while enhancing the exposure power. On the other hand, microsphere lens produces a sub-diffraction limit focal point-a so-called photonic nanojet-based on the near-surface focusing effect, which ensures an excellent patterning accuracy against the presence of surface roughness. Ray-optics simulation is utilized to design the bulk optics part of the lithography system, while a wave-optics simulation is implemented to simulate the optical properties of the exposed regions beneath the microspheres. We characterize the lithography performance in terms of the proximity effect, lens aberration, and interference effect due to refractive index mismatch between photoresist and substrate.
“…The observations when the spacing is beyond 125 nm infer that there is another factor playing an important effect on LEE. According to the report in [29], the extinction length of the photon can be expressed by 1/ L extinction = 1/ L scattering + 1/ L absorption , where L scattering and L absorption correspond to the scattering length and absorption length, respectively. Because the LEE mainly depends on the material absorption and structural scattering, it can be inferred that the scattering effect caused by the meshed p-GaN contacts dominantly affects the LEE when the spacing is larger than 125 nm.Fig.…”
In this work, flip-chip AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with various meshed contact structures are systematically investigated via three-dimensional finite-difference time-domain (3D FDTD) method. It is observed that both transverse electric (TE)- and transverse magnetic (TM)-polarized light extraction efficiencies (LEEs) are sensitive to the spacing and inclined angle for the meshed structure. We also find that the LEE will not be increased when a large filling factor is adopted for the meshed structures, which is because of the competition among the p-GaN layer absorption, the Al metal plasmon resonant absorption, and the scattering effect by meshed structures. The very strong scattering effect occurring in the hybrid p-GaN nanorod/p-AlGaN truncated nanocone contacts can enormously enhance the LEE for both TE- and TM-polarized light, e.g., when the inclined angle is 30°, the LEE for the TE- and TM-polarized light can be increased by ~ 5 times and ~ 24 times at the emission wavelength of 280 nm, respectively.
“…Among these light-emitting materials, inorganic LEDs including micro-LEDs or mini-LEDs are some of the most promising candidates for stretchable displays because they provide excellent device performance and mechanical robustness. − They can be stably applied to commercial microelectromechanical systems fabricated components and maintain high efficiency and electrical stability for extended operation. − Connecting inorganic LEDs on stretchable serpentine interconnects − or elastic polymer-based conductors − allows the flexible LED display to stretch without failure or performance degradation.…”
The recent commercial success of flexible and foldable displays has resulted in growing interest in stretchable electronics which are considered to be the next generation of the optoelectronic technology. Stretchable display technologies are being intensively studied for versatile applications including wearable, attachable, and shape changeable electronics. In this paper, we present high fill factor, stretchable inorganic light-emitting diode (LED) displays fabricated by connecting mini-LEDs and stretchable interconnects in a double-layer modular design. The double-layer modular design enables an increased areal coverage of LEDs and stretchable interconnectors with both electrical and mechanical stability. The main features of the double-layer modular design, fabrication processes, and device characteristics for the high fill factor, stretchable inorganic LED display are discussed, with experimental and computational results. Demonstrations of a passive matrix LED display confirm the potential value of the multi-layer structured, stretchable electronics in a wide range of applications that need high fill factor with high stretchability.
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